Evonik Degussa Gmbh

Blucher Gmbh

Evonik Operations Gmbh

Universitat Duisburg-essen

Thyssen Krupp Ag

Thyssenkrupp Electrical Steel Gmbh

Litarion Gmbh

Hartmut Wiggers

Frank-Martin Petrat

Christof Schulz

Markus Pridoehl

Michael Kraemer

Paul Roth

Juergen Erwin Lang

Martin Trocha

Martin Stutzmann

Michael Holzapfel

Petr Novak

Martin Brandt

André Ebbers

Ludger Lahn

Markus Pridöhl

Burkhard Reeken

Carsten Schepers

Robert Lechner

Hilmi Buqa

Hans Orthner

Petr Novák

Jasmina Kovacevic

Michael Krämer

Christian Hecht

Jasmina Kratochvil

Vanessa Zeuner

A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH, SiHand/or SiHand at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900&#xb0; C. to 1100&#xb0; C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.

Synthesis of silicon-carbon composite in a gas phase reactor

The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.

Process for producing carbon substrates loaded with metal oxides and carbon substrates produced in this way

The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonized to carbon, optionally followed by a third process step of activation.

The invention relates to a process for producing an electrically conductive, porous, silicon- and/or tin-containing carbon material which is suitable in particular for the production of an anode material, preferably for lithium ion batteries; in a first step of the process, preferably crystalline silicon nanoparticles and/or tin nanoparticles and/or silicon/tin nanoparticles are introduced into a matrix based on at least one organic polymer, being more particular dispersed therein, and subsequently, in a second step of the process, the resultant polymer matrix containing the silicon, tin and/or silicon/tin nanoparticles is carbonized to form carbon.

Intercalation of silicon and/or tin into porous carbon substrates

The invention relates to a process for producing coated carbon particles, which comprises coating electrically conductive carbon particles with elemental doped or undoped silicon by chemical vapor deposition from at least one gaseous silane in an oxygen-free gas atmosphere in a reaction space, with the electrically conductive carbon particles being in continual motion during the vapor deposition, and also correspondingly coated carbon particles and their use in anode materials for lithium ion batteries.

Method for producing coated carbon particles and use of the latter in anode materials for lithium-ion batteries

An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

Nanoscale crystalline silicon powder

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5&#xb7;10S&#xb7;cmto 10 S&#xb7;cm, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that

Porous semiconductive film and process for its production

An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m/g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.

Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

Growing community of inventors

Reken, Germany

Hartmut Wiggers