Siemens Aktiengesellschaft

Hartmut Runge

Eberhard F Krimmel

Guenther Meusburger

Hartmut Boroffka

Semiconductor components and integrated semiconductor circuits which are produced in a semiconductor crystal wafer are provided with a getter layer on the back side (opposite the active device side) of a semiconductor crystal wafer by controllably irradiating such back side with laser light pulses.

Process for gettering semiconductor components and integrated

A light emitting semiconductor component in which a semiconductor substrate of a first conductivity type has a zone of a second conductivity type formed therein immediately below a portion of a planar surface thereof. An insulating layer covers the planar surface but has a window through the insulating layer above most of the zone of the second conductivity type. A layer of Zn.sub.2 SiO.sub.4 doped with a luminous phosphor lies on the planar substrate surface within this window without contact with the walls of the window opening. Three metal electrodes are formed, one on the portion of the Zn.sub.2 SiO.sub.4 layer, one on the substrate surface above a marginal portion of the doped zone, and one on the substrate spaced from the doped zone. The Zn.sub.2 O.sub.4 layer is preferably doped with Mn ions in a concentration of between 5.multidot.10.sup.16 and 5.multidot.10.sup.19 cm.sup.-3. The depth of the zone is less than 1000 nm. One preferred doping for the zone of the second conductivity type is a doping of boron in a concentration of between 5.multidot.10.sup.18 and 5.multidot.10.sup.19 ions cm.sup.-3. A process for the production of the component is disclosed, and a process for the operation of the component is disclosed.

Light emitting semiconductor component

A process for producing an integrated circuit having a pair of complementary field effect transistors, one being a J-FET and the other being a MIS-FET. The process includes a series of masking and ion implantation steps carried out in part for both transistors at the same time. The doping of the region between the source and drain is increased for the MIS-FET at the same time that the doping of the channel of the J-FET is increased in order to control the threshold voltage of the MIS-FET.

Process for producing an integrated circuit including a J-FET and one

An arrangement for high speed ion beam switching in the production of determinate implantation doses for the doping, by ion implantation, in solid bodies, in which an electrode, preferably a diaphragm is interposed in the path of an ion beam from an ion source, and to which a potential is intermittently connected and disconnected in a controlled manner, to produce a potential wall which is disposed in the beam path of the ions, which has a value exceeding the kinetic energy of the ions, whereby the latter cannot pass therethrough.

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Kirchseeon, Germany

Hartmut Runge