Robert Boschgmbh

Michel, Hartmut

Hartmut Michel

Peter Flohrs

Bernd Bireckoven

Alfred Goerlach

Lothar Gademann

Anton Mindl

Christian Pluntke

Gerd Hohne

Ulrich Nelle

Ning Qu

Bernd Bodig

Gerhard Sohner

Peter Jurgen Schmidt

Herman Roozenbeek

Hans-Dieter Schmid

Helmut Schmied

Helmut Roth

Klaus Heyke

Manfred Uebele

Adam Hirt

Michael Schneider

Erich Jesse

Dirk Hoheisel

Bernd Bodig, Deceased

Hans Linstedt

Gert Strelow

Manfred Thanner

Gotz Bundschuh

Hans Berkemer

A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series and are laterally supported on a self-supporting semiconductor wafer. The partial components switch through, for example, at a given voltage applied between a first bridge cathode and an anodic metallization.

High voltage component and method for making same

An integrated circuit having a power transistor and a circuit arrangement functioning in a temperature dependant manner and thermally coupled to the power transitor. The integrated circuit is used to reliably disconnect the power transistor in the event of overheating., particularly in the case of inductive loads, and does not reactivate the power transistor until, for example, an edge change has occurred at the base terminal of the integrated circuit.

Circuit for protection from excess temperature

Described is a control circuit for an output stage for suppressing electrical and electromagnetic interference having a signal input (I), a signal output (O), and a ground terminal, two switch stages ( ) which are connected to the signal input (I) and the ground and which have one control terminal and one output terminal each, each switch stage ( ) switching over from a first state in which the potential at the output terminal follows the potential at the signal input (I) to a second state in which the potential at the output terminal is drawn to ground when a first or second threshold value (U , U ) is exceeded at its control terminal, the control terminal ( ) of the first switch stage ( ) being connected to an intermediary potential, which is between the potential at the signal input (I) and ground, the output terminal ( ) of the first switch stage ( ) forming the control terminal of the second switch stage ( ), the output terminal of the second switch stage forming the signal output (O) of the control circuit, and the threshold value (U ) of the first switch stage being higher than the threshold value (U ) of the second switch stage.

Input circuit for an output stage

A circuit arrangement, in particular for triggering an ignition output stage, having a power switching transistor and a switchable freewheeling circuit or an auxiliary channel. The freewheeling circuit or the auxiliary channel may be constituted by a triggerable four-layer element.

Circuit arrangement, in particular for triggering an ignition end stage

A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.

Integrated vertical semiconductor component

Integrated circuit for current control of a power transistor

Monolithically integrated planar semi-conductor arrangement with

Gating circuit having current measuring and regulating elements and a

A semiconductor device for influencing the breakdown voltage of a transistor with a surface electrode arranged over a space charge region, separated from the same by an oxide layer. The surface electrode is at a potential, as determined by a voltage divider, between the potentials of the base and collector of the transistor. The surface electrode includes two electrode plates insulated from one another, with the first electrode plate extending over a junction between a highly doped n.sup.+ collector region and a lightly doped n.sup.- collector region, and a junction between the lightly doped n.sup.- collector region and a p-type base region. The second electrode plate is bonded partly over the oxide layer and partly with the highly doped n.sup.+ collector region.

Semiconductor device for influencing the breakdown voltage of transistors

Monolithic integrated semiconductor device

Power output stage having a darlington-pair circuit for switching an

The invention relates to a voltage limiter for a transistor circuit with semiconductors (T.sub.20 and T.sub.21) in the arrangement of a plurality of successive amplifier stages, with a reference element (Zener diode Z.sub.20) and with at least one voltage divider arrangement (voltage divider R.sub.21 /R.sub.22). In accordance with the invention, the reference element (Zener diode Z.sub.20) is disposed downstream of the triggering circuit of the first stage or even closer at the output of the voltage limiter circuit for reducing the oscillation tendency.

Voltage limiter for transistor circuit

Darlington circuit having means for detecting a line interruption in its

A monolithic integrated semiconductor device is described, wherein for the adjustment of the breakdown voltage a cover electrode (7) is disposed in the area of the pn-junctions and a corresponding potential is applied through a voltage divider (1) for adjusting the breakdown voltage. For maintaining a temperature independent breakdown voltage it is provided that the voltage divider (1) consists of resistors (R1, R2) in the form of diffused zones which have different doping levels. The resulting different temperature coefficients of the resistors (R1,R2) of the voltage divider cause a temperature dependent potential change of the cover electrode potential, whereby a temperature stabilization of the breakdown voltage is obtained.

Monolithic integrated planar semiconductor system and process for making

Transistor arrangement with an output transistor

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Reutlingen, Germany

Hartmut Michel