Siemens Aktiengesellschaft

Hartmut Boroffka

Eberhard F Krimmel

Hartmut Runge

An arrangement for high speed ion beam switching in the production of determinate implantation doses for the doping, by ion implantation, in solid bodies, in which an electrode, preferably a diaphragm is interposed in the path of an ion beam from an ion source, and to which a potential is intermittently connected and disconnected in a controlled manner, to produce a potential wall which is disposed in the beam path of the ions, which has a value exceeding the kinetic energy of the ions, whereby the latter cannot pass therethrough.

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Irschenhausen, Germany

Hartmut Boroffka