Applied Materials, Inc.

Harsukhdeep S Ratia

Tetsuya Ishikawa

Son Truong Nguyen

Anzhong Chang

Yuriy Melnik

David H Quach

Olga Kryliouk

Lily L Pang

Sandeep Nijhawan

Brian Hayes Burrows

Jie Su

Anand Vasudev

Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

HVPE chamber hardware

HVPE precursor source hardware

Dome assembly for a deposition chamber

The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Methods for fabricating group III nitride structures with a cluster tool

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Santa Clara, CA, United States of America

Harsukhdeep S Ratia