Intel Corporation

Harshitha Vishwanath

Ruth Amy Brain

Ranjith Kumar

Sukru Yemenicioglu

Renukprasad Hiremath

Embodiments disclosed herein include a semiconductor device. In an embodiment, the semiconductor device comprises a substrate, and a cell on the substrate. In an embodiment, the cell comprises a plurality of transistors over the substrate, and a first metal layer over the plurality of transistors. In an embodiment, the first metal layer comprises a first power line, wherein a width of the first power line is entirely within the cell, a second power line, wherein a width of the second power line is entirely within the cell, and a plurality of signal lines between the first power line and the second power line.

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Bengaluru, India

Harshitha Vishwanath