Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Harry S Whitesell

Rajesh Prasad

Kwangduk Douglas Lee

Sarah Michelle Bobek

Prashant Kumar Kulshreshtha

Hidetaka Oshio

Scott Falk

Deven Matthew Raj Mittal

Tomohiko Kitajima

Venkataramana R Chavva

Abhijit Basu Mallick

Pramit Manna

Rui Cheng

Bo Qi

Shishi Jiang

Kyu-Ha Shim

Huiyuan Wang

Dong H Lee

Dong Hyung Lee

Eric J Bergman

Muhammad M Rasheed

David Tanner

John Lee Klocke

Siamak Salimian

Padmanabhan Krishnaraj

Terrance Y Lee

Danny Cam Toan Lu

Sudhir R Gondhalekar

Jeffrey S Sullivan

Yacov Elgar

Bruno Geoffrion

Robert Duncan

Rudolf Gujer

Tzay-Fa Su

Tzu-Yu Liu

Ning Zhan

Diana E Gujer, Legal Representative

Adaeze Osonkie

Kurt Decker-Lucke

James Cournoyer

Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.

Forming a doped hardmask

Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Highly etch selective amorphous carbon film

Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

3D NAND etch

Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350&#xb0; C.

Techniques for improved removal of sacrificial mask

Embodiments of the present invention relate to a solar simulator module of a solar cell production line. In one embodiment the solar simulator receives a solar cell module in a horizontal position and reorients the module into a vertical position. A light source is oriented to emit a flash of light in a substantially horizontal orientation toward the vertically oriented solar cell module. In one embodiment, an automated labeling device affixes a label including the electrical characteristics measured onto a back surface of the solar cell module. In one embodiment, a plurality of solar cell modules are received and tested simultaneously.

Photovoltaic cell solar simulator

Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Gas distribution system for improved transient phase deposition

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Sunnyvale, CA, United States of America

Harry S Whitesell