Rca Inc.

General Electric Company

Ppg Industries Ohio, Inc.

Sarnoff Corporation

Harry Louis Pinch

Benjamin Abeles

Jonathan Isaac Gittleman

Herbert Irwin Moss

Christopher C Gregory

Barry Jay Thaler

Grzegorz Kaganowicz

Stephen Thomas Opresko

Lawrence A Goodman

Lawrence K White

Chih C Wang

John E Smarto

Ronald F Bates

Ronald Keith Smeltzer

A method for applying a bus bar to the peripheral edge region of a shaped substrate is disclosed. The method involves: 1) applying a protective coating to a blank substrate; 2) edging the blank substrate to shape; 3) applying a conductive coating to the peripheral edge region of the shaped substrate; and 4) removing the protective coating, along with excess conductive material.

Bus bar application method

A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.

Hydrogenation of polysilicon thin film transistors

An improved method of fabricating thick film dielectrics and copper conductors comprises depositing and drying an appropriate thick-film ink, treating the resulting patterned layer with a carbon dioxide plasma until substantially all of the organic vehicle is removed therefrom and then firing the layer in an inert atmosphere. In an alternate embodiment, a dried dielectric ink is initially treated with an oxygen plasma until about 75 to 99 percent of the vehicle is removed. Multilayer copper-based circuit structure fabricated utilizing the subject method are characterized by excellent integrity of the dielectric layers.

Organic binder removal using CO.sub.2 plasma

An improved information storage and playback system comprising a playback stylus and a disc record. The information is recorded in the surface of the disc record and there is relative motion between the disc and the playback stylus during recovery of the recorded information. The stylus is fabricated out of a dielectric support material and contacts the record disc surface during the recovery of the information. The improvement comprises employing a playback stylus whose dielectric support material is single crystal magnesium aluminate spinel. The spinel composition comprises a ratio of MgO to Al.sub.2 O.sub.3 of from about 1:1 to about 1:2.5.

Spinel video disc playback stylus

A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

Method of making high resistance cermet film

A method for depositing a layer in which the concentration of constituent materials varies through its thickness employs a radio frequency sputtering apparatus. The deposition apparatus has a target composed of different component materials for the layer. The substrate is placed within the deposition apparatus and moved to various positions with respect to the target during the deposition.

Composite sputtering method

One end of a support structure of dielectric material tapers to a tip which has a curved bottom surface. A cermet film composed of a conductive material and a dielectric material which adheres well to the support structure is on a portion of the support structure's surface. The concentration of the constituent materials in the cermet film varies through its thickness. The cermet film at the interface with the support structure has a high concentration of dielectric material while the portion of cermet film at its exposed surface has a high conductive material concentration.

Video disc stylus

High resistance cermet film and method of making the same

A metal oxide vapor, such as tungsten oxide, is reacted with a ceramic material, such as aluminum oxide, at a temperature in the range of from about 1300.degree.C to about 1400.degree.C. The metal oxide vapors diffuse into the ceramic material during the reaction. The ceramic material, which now includes tungsten oxide diffused therein, is then subjected to a reducing atmosphere so as to form a cermet region in the ceramic material.

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Princeton, NJ, United States of America

Harry Louis Pinch