Massachusetts Institute of Technology

Boston Microsystems, Inc.

Korea Institute of Science and Technology

International Fuel Cells, LLC

Harry L Tuller

Il-Doo Kim

Richard Mlcak

Ytshak Avrahami

Dharanipal Doppalapudi

Yong Woo Choi

Marlene A Spears

Theodore D Moustakas

Akintunde Ibitayo Akinwande

Sean R Bishop

Steve A Kramer

Dmitri Kalaev

Donald L Maricle

Jae-Min Hong

Dong-Young Kim

Jennifer Rupp

Seong-Mu Jo

Uday B Pal

Avner Rothschild

Thomas E Swarr

Krystyn J Van Vliet

Thomas Defferriere

Jae Jin Kim

James F Smith

Joshua L Hertz

Pedro Henrique Suman

Kathy Sahner

Huankiat Seh

Anderson Andre Felix

Takeo Hyodo

Jose Arana Varela

Marcelo Ornaghi Orlandi

Richard Micak

Jessica G Swallow

Holger Fritze

Reconfigurable, active optical components can flexibly manipulate light. One example of these components is an electro-chemo-optical device that utilizes a metal oxide film with a complex refractive index that varies as a function of an oxygen vacancy concentration. The optical device may include a metal oxide film, a first electrode, and a second electrode. The first electrode and the second electrode may be used to supply a bias voltage to induce a change in the oxygen vacancy concentration in order to change the optical properties (absorbance, transmittance, and/or reflectance) of the optical device. The magnitude and spatial distribution of the oxygen vacancy concentration may be altered to affect the optical properties of the optical device. In some designs, the optical device may also include an ionic conductor and oxygen source to supply/receive oxygen ions to/from the metal oxide film.

Reprogrammable electro-chemo-optical devices and methods for using the same

An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10Siemens/cm to about 10Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).

Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties

Current techniques for measuring chemical expansion in thin film structures are too slow, too imprecise, or require synchrotrons. In contrast, nanoscale electrochemomechanical spectroscopy (NECS) can be used to make nanoscale measurements at time scales of seconds with simple contact or non-contact sensors. In a NECS measurement, a sample, such as thin-film oxide structure, is subjected to a temporally modulated stimulus, such as a sinusoidally alternating voltage. The stimulus causes the sample to expand, contract, deflect, or otherwise deform. A sensor, such as a contact probe or optical sensor, produces an electrical signal in response to this deformation that is correlated with the temporal modulation of the stimulus. Because the stimulus and deformation are correlated, the temporal modulation of the stimulus can be used to filter the deformation signal produced by the sensor, producing a precise, sensitive measurement of the deformation.

Frequency-based detection of chemical expansion dynamics in thin films

Gas sensor. The sensor is a single crystalline SnO disk and circuitry for measuring electrical resistance of the disk is provided. A change in resistance in the disk indicates adsorption of a gas on the disk's surface. The sensor is particularly adapted for detecting NOwith high sensitivity and selectivity.

Gas sensor with tin monoxide disks

A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO, LaSrCoO(LSCO), or LaPbCoO(LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.

Fabrication of electronic and photonic systems on flexible substrates by layer transfer method

Radiation detector. The detector includes an ionic junction having an ionically bonded wide band gap material having a first region dominated by positively charged ionic defects in intimate contact with a second region dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. The detector also includes an ionic junction having a first ionically bonded wide band gap material dominated by positively charged ionic defects in intimate contact with a second ionically bonded wide band gap material dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. Circuit means are provided to establish a voltage across the junction so that radiation impinging upon the junction will cause a current to flow in the circuit.

Ionic junction for radiation detectors

The present invention discloses a solid oxide fuel cell and method for fabricating solid oxide fuel cells using thin film processing techniques. The fuel cell comprises a cathode layer, an electrolyte layer, and an anode layer arranged in various configurations to optimize fuel cell performance.

Micro fuel cell

Fuel cell structure. A plurality of microtubes are electrically inter-connected. Each microtube includes an anode and a cathode layer separated by an electrolyte layer. The plurality of microtubes are arranged in at least two adjacent layers with microtubes in a first layer extending in a first direction and the microtubes in the second layer extending in a second direction, the first and second directions being non-parallel.

Interconnected, 3-dimensional fuel cell design

A method for fabricating an ultra-sensitive metal oxide gas sensor is disclosed, which comprises the steps of spinning a mixture solution including a metal oxide precursor and a polymer onto a sensor electrode to form a metal oxide precursor-polymer composite fiber; thermally compressing or thermally pressurizing the composite fiber; and thermally treating the thermally compressed or thermally pressurized composite fiber to remove the polymer from the composite fiber. Since the gas sensor includes a macro pore between nanofibers and a meso pore between nano-rods and/or nano-grains, gas diffusion and surface area can be maximized. Also, the ultra-sensitive sensor having high stability in view of mechanical, thermal, and electrical aspects can be obtained through rapid increase of adhesion between the metal oxide thin layer and the sensor electrode.

Ultra-sensitive metal oxide gas sensor and fabrication method thereof

A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.

Integrated BST microwave tunable devices using buffer layer transfer method

A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.

Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications

A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.

High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate

A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.

Integrated BST microwave tunable devices fabricated on SOI substrate

A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.

Growing community of inventors

Wellesley, MA, United States of America

Harry L Tuller