Bell Telephone Laboratories

Other

At&t Bell Laboratories

Western Electric Company, Inc.

American Telephone and Telegraph, Co.

Harry John Leamy

Lionel C Kimerling

George K Celler

Ho Sou Chen

Robert Charles Frye

Barry Irwin Miller

Richard C Sherwood

Ernst M Gyorgy

Adam Heller

John Milo Poate

Paul H Schmidt

George Elwood Smith

Ronald J Nelson

Lee E Trimble

George Arthur Rozgonyi

Janet L Benton

Jacques A Augis

David C Joy

Thomas E Seidel

Bruce A Parkinson

Kenneth A Jackson

Charles J Doherty

Stephen Duncan Ferris

Louis David Longinotti

Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal substrate a layer of an insulating material, such as a silicon oxide. A small via hole is produced in the insulating layer to leave a portion of the underlying substrate uncovered. A precursor material is deposited on the insulating layer so that it covers at least a portion of the insulating layer and also contacts the substrate at the via hole. The precursor layer is then formed into a single crystal by inducing growth on the substrate at the via hole and propagating this growth through the precursor layer.

Process for the growth of structures based on group IV semiconductor

Crystal grain size in a material is increased by scanning the material with an appropriately directed energy beam. Short-term oscillation in the scan, and a particular temperature gradient configuration in the wake of the scan, results in growth of large-grain crystallites.

Method of increasing the grain size of polycrystalline materials by

Dielectrically isolated areas of single crystalline silicon suitable for use in device applications have been produced utilizing a particular processing sequence. This sequence first involves producing an area of porous silicon on a silicon substrate. A single crystal region of silicon is then formed on the porous silicon through procedures such as molecular beam epitaxy, chemical vapor deposition or laser fusion. The region of the porous silicon under the single crystal silicon is then oxidized in a specifically controlled manner to form an insulator.

Method of forming dielectrically isolated silicon semiconductor

A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a low segregation coefficient and a second dopant having a high segregation coefficient. During rapid resolidification of the melt, the first dopant segregates toward the surface, while the second dopant remains substantially in place, producing a junction. The production of diodes, bipolar and field effect transistors, Schottky barriers, ohmic contacts, junction isolated surface regions, high conductivity paths, etc., is possible by this method.

Formation of multilayer dopant distributions in a semiconductor

Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.

Gallium arsenide devices having reduced surface recombination velocity

The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.

Passivation of defects in laser annealed semiconductors

A temperature gradient zone melting process is disclosed wherein the temperature gradient is established substantially across only the molten zone by preferentially heating the molten zone. In a specific embodiment, the mechanism for inputting heat to the molten zone involves exposing the substrate to optical radiation of a wavelength and magnitude for which the molten zone is absorptive and the remainder of the body is transparent. The molten zone thereby migrates through the body toward the source of optical radiation.

Photo-induced temperature gradient zone melting

The rate at which radiation defects in semi-conductors are annealed is enhanced by various electronic mechanisms. These effects can be used to program device arrays in which all devices are initially damaged, then selected devices are activated by addressing them electrically through the individual device contacts.

Healing radiation defects in semiconductors

A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately 'written'. This pattern forms a continuous region of essentially single crystal material.

Patterned epitaxial regrowth using overlapping pulsed irradiation

An electric fuse is disclosed whose metallic fuse element is in a glassy state. The disclosed fuse is fast-acting and is particularly suited to protect delicate electronic apparatus against current overload.

Electric fuse

The disclosed magnetic devices, including a magnetically coupled conducting path, incorporate amorphous, low magnetostriction alloys of the general formula (Co.sub.a Fe.sub.b T.sub.c).sub.i X.sub.j, the 'metallic' constituents thereof being within the parenthetical expression. T, in the formulation, is selected from among Ni, Cr, Mn, V, Ti, Mo, W, Nb, Zr, Pd, Pt, Cu, Ag and Au, X being at least one 'glass former' selected from among P, Si, B, C, As, Ge, Al, Ga, In, Sb, Bi and Sn. The 'metallic' constituents comprise from 70-90 atomic percent of the alloy with cobalt being present in an amount of at least 70 atomic percent of the 'metallic' constituents. The described material is prepared by rapid cooling from the liquid, directly to the shape needed for fabrication of the device (e.g., tape to be wound to form an inductor core). When the amorphous material is fabricated to its finished geometry, raised to a temperature somewhat below its crystallization temperature and quenched in a high heat of vaporization liquid (e.g., water), the permeability is greatly improved. An exemplary alloy was shown to possess properties, in some respects, equivalent to those of Supermalloy, an alloy of much more complex manufacture.

Method of making magnetic devices including amorphous alloys

An electron source using a single lanthanum hexaboride crystal oriented so the emitting surface is defined by a {110} crystal plane.

Growing community of inventors

New Providence, NJ, United States of America

Harry John Leamy