Taiwan Semiconductor Manufacturing Comp. Ltd.

Harry-Hay-Lay Chuang

Ming Zhu

Cheng-Cheng Kuo

A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.

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Singapore, Singapore

Harry-Hay-Lay Chuang