Rca Inc.

Exxon Research and Engineering Company

Optical Information Systems, Inc.

Harry Francis Lockwood

Michael Ettenberg

Henry Kressel

Frederick W Scholl

Peter S Zory, Jr

Jacques I Pankove

Ivan Ladany

Thomas F McGee

A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.

Mounting arrangement for semiconductor optoelectronic devices

Microwave curing of photoresist films employed in processing semiconductor wafers provides an alternative to conventional drying techniques. The time of curing may be reduced from about 20 to 25 minutes required for conventional air drying to about 5 minutes employing microwave curing. Further, the photoresist film is the only part of the semiconductor assembly that experiences elevated temperatures. The remainder of the wafer remains near ambient conditions, without experiencing possible deleterious effects as a consequence of the high temperature processing.

Microwave curing of photoresist films

Semiconductor optoelectronic device package

A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.

Half wave protection layers on injection lasers

A semiconductor electroluminescent device includes a body having a pair of spaced end surfaces, at least one of which is capable of emitting light generated in the body and a recombination region in the body extending from one end surface to the other end surface. The body also includes a pair of spaced contacting surfaces which are approximately perpendicular to the end surfaces. On one of the contacting surfaces is a stripe contact which includes a plurality of spaced, parallel electrically conductive sub-stripes extending from one of the end surfaces to the other end surface with insulation between the sub-stripes. The sub-stripes may be conductive films on the surface of the body or conductive regions within the body. The width of the sub-stripes and the spacing therebetween along the end surfaces, are such that the stripe contact provides a substantially uniform current density at the recombination region of the device.

Stripe contact providing a uniform current density

A thin layer of semiconductor material with an extremely smooth surface can be grown on a substrate by liquid phase epitaxy. When the growing solution contacts the surface of the substrate, the substrate is at a lower temperature than the solution. The temperature difference should be less than 1.degree. C and depends upon the desired degree of smoothness. Both the substrate and the solution are then cooled to permit deposition of the layer.

Liquid phase epitaxial growth with interfacial temperature difference

A body of semiconductor material has opposed end surfaces, opposed side surfaces extending to the end surfaces and opposed first and second contact surfaces which are substantially perpendicular to the end and side surfaces. The body includes a substrate having on a surface thereof a mesa shaped active region which extends to the first contact surface. The active region has side surfaces which are spaced from the side surfaces of the body. Also on the substrate are passive regions which extend from the side surfaces of the active region to the first contact surface and side surfaces of the body. The active region has a P-N junction therein. The passive regions each include a plurality of contiguous passive layers having, P-N junctions therebetween. The P-N junctions of the passive regions extend from the first contact surface to the side surface of the body. Metallic electrodes are on each of the contact surfaces. The passive regions serve to restrict current flow to the active region.

Electroluminescent semiconductor device having a restricted current flow

An electroluminescent semiconductor device having an optical axis includes two cylindrical surface segments spaced from and opposite each other. One of the cylindrical surface segments is the light emitting surface with a center of curvature C.sub.1 and a focal point, f, on the optical axis. The other cylindrical surface segment is a light reflecting surface having a center of curvature C.sub.2 on the optical axis. The electroaluminescent device has a pair of flat surfaces, spaced from each other and substantially perpendicular to the light emitting and reflecting surfaces. On one of the flat surfaces is a first electrical contact. On a portion of the opposite flat surface is a second electrical contact which is positioned along the optical axis on or between the center of curvature C.sub.1 and the focal point f. Light is generated in the electroluminescent device in the area of the second contact. Preferably, if the focal point f and center of curvature C.sub.2 are at the same location on the optical axis the benefits to light emission are two fold. First, the light emitted from such a point will be collimated and secondly light striking the reflected surface will be reflected back to the focal point f thereby improving the possibility of its emission as collimated light.

Light emitting diode with reflector

A body of single crystalline semiconductor material having spaced opposed end surfaces which form a Fabry-Perot cavity. The body includes four contiguous regions of alternating conductivity type forming three PN junctions which extend between the end surfaces of the body. Along one of the PN junctions at least a portion of at least one of the regions is a recombination zone where light is generated upon the recombination of oppositely charged carriers when the PN junctions are forwardly biased to inject one type of charged carriers into the recombination zone. Along at least one side of the recombination zone is a zone having an index of refraction lower than the index of refraction of the recombination zone to confine light in the recombination zone. Also, along one side of the recombination zone is a zone which confines the injected charged carriers in the recombination zone.

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New York, NY, United States of America

Harry Francis Lockwood