Other

Gte Laboratories Incorporated

Foster-miller, Inc.

Arradiance, Inc.

Laboratories Incorporated

Harry F Lockwood

Marvin J Tabasky

Margaret B Stern

Paul O Haugsjaa

Craig A Armiento

Chirravuri Jagannath

Thomas W Fitzgerald

Vincent J Barry

Mark A Rothman

David R Beaulieu

Anton Tremsin

Victor Cataldo

Kumaraswamy Jayaraj

Thomas E Noll

A microchannel amplifier includes an insulating substrate that defines at least one microchannel pore through the substrate from an input surface to an output surface. A conductive layer is formed on an outer surface of the at least one microchannel pore that has a non-uniform resistance as a function of distance through the at least one microchannel pore. The non-uniform resistance is selected to simulate saturation by reducing gain as a function of input current and bias voltage compared with uniform resistance. A first and second electrode is deposited on a respective one of the input and the output surfaces of the insulating substrate. The microchannel amplifier amplifying emissions propagating through the at least one microchannel pore when the first and second electrodes are biased.

Microchannel amplifier with tailored pore resistance

A field emission device with a micro-channel gain element included a plurality of field emission or &ldquo;cold&rdquo; cathodes ( ) formed into an array. The cold cathodes are typically modulated by a grid ( ) having a driving voltage. A microchannel gain element ( ) is secondary electron emissive material within each of the channels. The channels correspond number and location to the cathode and enable multiplication of electron emitted by the cathodes. Multiplication of the electrons enables the cathodes to be driven at a lower current of emitted electrons than normally applied, absent the microchannel, to obtain the same resulting beam. The beam existing each of the micro-channels is directed to an anode ( ), which can include a phosphor ( ) for use in a flat panel display. Alternatively, anode can include a semiconductor substrate having a reactive resist, and an electrostatic lens structure can be employed to focus the beams to produce a mask pattern on the substrate according to a predetermined mask pattern.

Field emission device with microchannel gain element

A hermetically sealed package for at least one semiconductor chip is provided which is formed of a substrate having electrical interconnects thereon to which the semiconductor chips are selectively bonded, and a lid which preferably functions as a heat sink, with a hermetic seal being formed around the chips between the substrate and the heat sink. The substrate is either formed of or includes a layer of a thermoplastic material having low moisture permeability which material is preferably a liquid crystal polymer (LCP) and is a multiaxially oriented LCP material for preferred embodiments. Where the lid is a heat sink, the heat sink is formed of a material having high thermal conductivity and preferably a coefficient of thermal expansion which substantially matches that of the chip. A hermetic bond is formed between the side of each chip opposite that connected to the substrate and the heat sink. The thermal bond between the substrate and the lid/heat sink may be a pinched seal or may be provided, for example by an LCP frame which is hermetically bonded or sealed on one side to the substrate and on the other side to the lid/heat sink. The chips may operate in the RF or microwave bands with suitable interconnects on the substrate and the chips may also include optical components with optical fibers being sealed into the substrate and aligned with corresponding optical components to transmit light in at least one direction. A plurality of packages may be physically and electrically connected together in a stack to form a 3D array.

Chip packaging technique

A field emission device with microchannel gain element provides a plurality of field emission or 'cold' cathodes formed generally into an array. The cold cathodes are typically modulated by a grid having a driving voltage. A microchannel gain element is located adjacent the array of cathodes and provides a series of microchannels having a secondary electron emissive material within each of the channels. The channels correspond in number and location to the cathodes and enable multiplication of electrons emitted by the cathodes. Multiplication of the electrons enables the cathodes to be driven at a lower current of emitted electrons than normally applied, absent the microchannel, to obtain the same resulting beam. The beam exiting each of the microchannels is directed to an anode which can comprise a phosphor for use in a flat panel display.

A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioned the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

Method and device for passive alignment of diode lasers and optical

A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels to that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF.sub.6. WF.sub.6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.

Growing community of inventors

Waban, MA, United States of America

Harry F Lockwood