International Business Machines Corporation

Globalfoundries Inc.

Globalfounries Inc.

Harry David Cox

Charles Leon Arvin

Eric D Perfecto

Krystyna Waleria Semkow

Hsichang Liu

Raschid Jose Bezama

John Joseph Garant

Jeffrey A Brody

David Clifford Long

Timothy Harrison Daubenspeck

Thong N Nguyen

John P Gauci

John R Lankard, Jr

Robert L Baan

Jennifer D Schuler

Paul G McLaughlin

John A Trumpetto

Hariklia Deligianni

Timothy Dooling Sullivan

Benjamin V Fasano

Katsuyuki Sakuma

Thomas Anthony Wassick

Brian Richard Sundlof

Brian Michael Erwin

Richard Francis Indyk

Dinesh Gupta

Arthur Gilman Merryman

George John Scott

Adolf E Wirsing

Michael S Cranmer

Jorge A Lubguban

Leonard J Gardecki

Doris P Pulaski

Nike Oluwakemi Medahunsi

David J Specht

Michael Stephen Vanca

Charles H Keeler

Tom Wayson

David P Daniel

Albert J Gregoritsch, Iii

Ruth A Machell Julianelle

Richard Michael Shroedl

Connie Fassett Littell

Mary A Schaffer

David L Smith

David John Russell

David L Questad

Sarah Huffsmith Knickerbocker

Srinivasa S N Reddy

Karen P McLaughlin

Charles Timothy Ryan

Carla A Bailey

Ahmed Sayeed Shah

Evelyn Barrington

Lorraine Di Piero-Simmonds

Edward J Hassdenteufel, Iii

Richard C Steger

Hua Gan

Dale W Snowdon

Vall F McClean

Disclosed are electrodeposition systems and methods wherein at least three electrodes are placed in a container containing a plating solution. The electrodes are connected to a polarity-switching unit and include a first electrode, a second electrode and a third electrode. The polarity-switching unit establishes a constant polarity state between the first and second electrodes in the solution during an active plating mode, wherein the first electrode has a negative polarity and the second electrode has a positive polarity, thereby allowing a plated layer to form on a workpiece at the first electrode. The polarity-switching unit further establishes an oscillating polarity state between the second and third electrodes during a non-plating mode (i.e., when the first electrode is removed from the plating solution), wherein the second electrode and the third electrode have opposite polarities that switch at regular, relatively fast, intervals, thereby limiting degradation of the second electrode and/or the plating solution.

Electrodeposition systems and methods that minimize anode and/or plating solution degradation

A semiconductor device and a stacked pillar used to interconnect a first semiconductor die and a second semiconductor die are provided. The semiconductor device has a substrate, a splice interposer, a first semiconductor die, a second semiconductor die and first to fourth plurality of pillars. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate. The stacked pillar has a first conductor layer formed on a surface of the first semiconductor die, a first solder layer formed on the first conductor layer, a second conductor layer formed on the first solder layer, and a second solder layer formed on the second conductor layer. The second solder layer is heat-reflowable to attach the stacked pillar to a surface of the second semiconductor.

Structure for establishing interconnects in packages using thin interposers

A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.

Semiconductor device contact structure having stacked nickel, copper, and tin layers

A photoresist stripping tool includes a reservoir configured to contain photoresist stripping solution and a Pb filter comprising a filter element with Tin (Sn) exterior surfaces. A semiconductor wafer fabrication system includes a semiconductor wafer attached to the photoresist stripping tool that strips photoresist from the semiconductor wafer. A photoresist stripping processes includes stripping photoresist from a leaded semiconductor wafer with photoresist stripping solution within the photoresist stripping tool, filtering Lead Pb from the photoresist stripping solution with the Pb filter, and stripping photoresist from a lead-free semiconductor wafer with the filtered photoresist stripping solution.

Filtering lead from photoresist stripping solution

A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be detected through optical sensors. The opaque layer may be modified, or oriented, to allow light to pass through unobstructed.

Non-transparent microelectronic grade glass as a substrate, temporary carrier or wafer

A method for processing a semiconductor wafer where an electrostatic layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be handled with machinery that uses an electrostatic chuck. The electrostatic layer may be manipulated to increase or decrease the conductivity, and may be removed to allow light to pass through the handling wafer.

Anodized metal on carrier wafer

A method of interconnecting first and second semiconductor dies is provided. A splice interposer is attached to a top surface of a substrate through first pillars formed on a bottom surface of the splice interposer. The first semiconductor die is attached to the top surface of a substrate through second pillars formed on a bottom surface of the first semiconductor die. The first semiconductor die is attached to a top surface of the splice interposer through third pillars formed on the bottom surface of the first semiconductor. The second semiconductor die is attached to the top surface of the splice interposer through fourth pillars formed on a bottom surface of the second semiconductor die. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate.

Method for establishing interconnects in packages using thin interposers

A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.

Dual layer stack for contact formation

Multilayered contact structure having nickel, copper, and nickel-iron layers

An electroplating apparatus including a reference electrode to control the potential during an electro-deposition process. The electroplating apparatus may include a bath containing a plating electrolyte and an anode present in a first portion of the bath containing the plating electrolyte. A cathode is present in a second portion of the bath containing the plating electrolyte. A reference electrode is present at a perimeter of the cathode. The electroplating apparatus also includes a control system to bias the cathode and the anode to provide a potential. A measuring system is provided in electrical communication with the reference electrode to measure the potential of the cathode. Methods of using the above described electroplating apparatus are also provided. Structures and method for electroless deposition are also provided.

Method and apparatus for controlling and monitoring the potential

Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

Structures for improving current carrying capability of interconnects and methods of fabricating the same

Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles.

Multi-anode system for uniform plating of alloys

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Rifton, NY, United States of America

Harry David Cox