Taiwan Semiconductor Manufacturing Comp. Ltd.

Harry Chien

Chia-Hao Chang

Pinyen Lin

Lin-Yu Huang

Sung-Li Wang

Shin-Yi Yang

Shuen-Shin Liang

Chia-Hung Chu

Wei-Yip Loh

Po-Chin Chang

Hung-Yi Huang

Hong-Mao Lee

Chun-Hung Liao

Kan-Ju Lin

Yuting Cheng

Min-Hsuan Lu

Tzu Pei Chen

Provided are devices with conductive contacts and methods for forming such devices. A method includes forming a lower conductive contact in a dielectric material and over a structure, wherein the lower conductive contact has opposite sidewalls that extend to and terminate at a top surface. The method also includes separating an upper portion of each sidewall from the dielectric material and locating a barrier material between the upper portion of each sidewall and the dielectric material. Further, the method includes forming an upper conductive contact over the lower conductive contact.

Conductive structure interconnects with downward projections

The present disclosure describes a buried conductive structure in a semiconductor substrate and a method for forming the structure. The structure includes an epitaxial region disposed on a substrate and adjacent to a nanostructured gate layer and a nanostructured channel layer, a first silicide layer disposed within a top portion of the epitaxial region, and a first conductive structure disposed on a top surface of the first silicide layer. The structure further includes a second silicide layer disposed within a bottom portion of the epitaxial region and a second conductive structure disposed on a bottom surface of the second silicide layer and traversing through the substrate, where the second conductive structure includes a first metal layer in contact with the second silicide layer and a second metal layer in contact with the first metal layer.

Buried conductive structure in semiconductor substrate

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Chandler, AZ, United States of America

Harry Chien