USA As Represented by Secretary of the Navy

Harry B Dietrich

Michael Y Frankel

Jin Ung Kang

William S Rabinovich

John Bradley Boos

Steven R Bowman

Nicolas A Papanicolaou

Aristos Christou

John E Davey

Phillip E Thompson

Gordon W Anderson

Ingham A Mack

Douglas S Katzer

Bela Molnar

David I Ma

Frederick G Moore

Single event upset failure are suppressed in GaAs-based electronics by implanting the GaAs substrate with an appropriate dose of O and at least one of either Al, Cr, or In.

Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds

An optically addressed spatial light modulator includes top and bottom conductive layers sandwiching an intrinsic semiconductor multilayer structure. A cladding layer having a high trapping density is sandwiched between at least one of the electrodes and the intrinsic semiconductor layer structure. Typically, one cladding layer will be sandwiched between the top conductive layer and the intrinsic semiconductor multilayer structure and another cladding layer will be sandwiched between the bottom conductive layer and the intrinsic semiconductor structure. The cladding layer or layers laterally confine the photocarriers generated within the intrinsic semiconductor multilayer structure.

Optically addressed spatial light modulator using an intrinsic

A method for ion-implanting a dopant species in semiconductors includes the steps of implanting a dopant species in a semiconductor material at a predetermined rate, the predetermined rate being based on a rate corresponding to a maximum in a characteristic graph of percent activation as a function of dopant species implantation rate; and annealing the dopant implanted semiconductor.

Implanting impurities in semiconductors and semiconductor implanted with

An integrated, planar, single-channel, photodetector-amplifier device is disclosed. The single-channel device includes a photodetector layer and an amplifier layer above the photodetector layer. The photodetector layer is low-doped to give a low dark current and is sufficiently thick to give a high quantum efficiency. The amplifier layer is of a smaller thickness and is a more highly doped material than the photodetector layer, to provide an amplifier having high gain. An insulating layer is included between the photodetector and amplifier layers for electrically isolating the photodetector and amplifier layers. The layers are fabricated on a substrate. Isolation regions are also included for electrically laterally isolating a photodetector, amplifier, and other circuit components comprising the single channel device from each other. An integrated multi-channel photodetector-amplifier array is also disclosed which array comprises a plurality of single-channel photodetector-amplifier devices fabricated on the same substrate with isolation regions created by proton bombardment to electrically laterally isolate the individual circuit channels from each other. The photodetector-amplifier array may be a linear or an area array.

Monolithic multichannel detector amplifier arrays and circuit channels

An InP wafer, comprising a S.I. InP substrate, a n-type InP active layer disposed on the substrate and oxygen implanted isolation regions disposed in the active layer.

Method of forming thermally stable high resistivity regions in n-type

A method for protecting an ion-implanted substrate during the annealing process by covering the ion-implanted layer with a suitable encapsulant. A thin layer of ions are implanted into a GaAs substrate. A protective layer of germanium, amorphous GaAs, doped GaAs, or GaAlAs is applied over the implanted layer and on the periphery of the ion-implanted GaAs substrate. The composite is annealed at a temperature which is adequate for the lattice to recover from the ion-implantation-induced damage. The protective layer is removed subsequent to the anneal step, without any damage to the ion-implanted layer.

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Fairfax Station, VA, United States of America

Harry B Dietrich