Microchip Technology Inc.

Harold Kline

Roger Melcher

Jacob Lee Williams

Gregory Dix

Greg Dix

Dan Grimm

Jacob L Williams

A semiconductor power chip has a semiconductor power device formed on a semiconductor die; wherein the semiconductor power device comprises an array of conductive contact elements; a passivation layer formed over the plurality of conductive contact elements, the passivation layer comprising passivation openings over a plurality of the conductive contact elements; and an array of conductive bumps including one or more interconnection bumps, wherein each interconnection bump is formed over the passivation layer and extends into at least two of the passivation openings and into contact with at least two underlying conductive contact elements to thereby provide a conductive coupling between the at least two underlying conductive contact elements.

Bumps bonds formed as metal line interconnects in a semiconductor device

A power metal-oxide-semiconductor (MOS) field effect transistor (FET) has a plurality of transistor cells, each cell having a source region and a drain region to be contacted through a surface of a silicon wafer die, A first dielectric layer is disposed on the surface of the silicon wafer die and a plurality of grooves are formed in the first dielectric layer above the source regions and drain regions, respectively and filled with a conductive material, A second dielectric layer is disposed on a surface of the first dielectric layer and has openings to expose contact areas to the grooves. A metal layer is disposed on a surface of the second dielectric layer and filling the openings, wherein the metal layer is patterned and etched to form separate metal wires connecting each drain region and each source region of the plurality of transistor cells, respectively through the grooves.

Power MOS transistor with improved metal contact

A submicron contact opening fill using a chemical vapor deposition (CVD) TiN liner/barrier and a high temperature, e.g., greater than about 385&#xb0; C., physical vapor deposition (PVD) aluminum alloy layer that substantially fills the submicron contact.

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Phoenix, AZ, United States of America

Harold Kline