Case Western Reserve University

Harold Kahn

Arthur H Heuer

Jie Yang

Stephen M Phillips

Frank Ernst

Zhen Li

Arthur Heuer

A process for surface activation or depassivation of an article, in particular an alloy, by immersion of the alloy in an aqueous acid solution. The surface activation methods of the present invention can be performed during a relatively short period of time and achieve reductions in production costs and provide environmental friendliness as compared to prior art processes. In a further embodiment, after surface activation, the article is immersed in a second liquid that prevents re-formation of a passivating oxide layer on the surface of the article. In a further embodiment the surface-activated alloys are subjected to surface engineering by a process that infuses carbon or nitrogen through the surface at a temperature sufficiently low to suppress precipitation of carbides or nitrides.

Alloy surface activation by immersion in aqueous acid solution

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Multi-layer assemblies with predetermined stress profile and method for producing same

Large area polysilicon films with predetermined stress characteristics and method for producing same

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

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Lakewood, OH, United States of America

Harold Kahn