Fairchild Semiconductor Corporation

Harold Heidenreich

Hamza Yilmaz

Joseph Andrew Yedinak

James N Pan

Rodney S Ridley

Praveen Muraleedharan Shenoy

Mark L Rinehimer

Jaegil Lee

Chongman Yun

Christopher L Rexer

Dwayne S Reichl

Josph A Yedinak

In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.

Superjunction structures for power devices and methods of manufacture

Growing community of inventors

Drums, PA, United States of America

Harold Heidenreich