International Business Machines Corporation

Other

Harold G Linde

Rosemary A Previti-Kelly

Dennis P Hogan

Ronald A Warren

Thomas J Reen

Steven J Holmes

Thomas George Ference

Michael Straight Hibbs

Donald W Brouillette

Ronald Lee Mendelson

Larry W Austin

John Edward Cronin

David V Horak

Mark Charles Hakey

Paul A Farrar

Edmund Juris Sprogis

James Spiros Nakos

Anthony M Palagonia

Cuc Kim Huynh

Thomas Benjamin Faure

Matthew J Rutten

Bernadette Ann Pierson

Charles Arthur Whiting

James P Levin

Patricia E Marmillion

Steven D Flanders

Jeffrey F Shepard

Robert T Gleason

Robert K Leidy

Wu-Song S Huang

William Thomas Motsiff

Ranee W Kwong

James Allan Bruce

Harbans S Sachdev

Jay Sanford Burnham

Michael L Kerbaugh

Joseph L Malenfant, Jr

Margaret L Gibson

John James Lajza, Jr

Denise M Puisto

Gary P Viens

Denis J Poley

Marilyn R Leduc

Tanya N Lee

Lyndon S Gibbs

Douglas Earl Benoit

Nicholas N Mone, Jr

Michael W MacIntyre

Elizabeth T Murphy

A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.

Wafer thickness control during backside grind

The present invention provides a method of forming an integrated semiconductor device, and the device so formed. An active surface of at least two semiconductor devices, such as semiconductor chips, are temporarily mounted onto an alignment substrate. A support substrate is affixed to a back surface of the devices using a conformable bonding material, wherein the bonding material accommodates devices having different dimensions. The alignment substrate is then removed leaving the devices wherein the active surface of the devices are co-planar.

Integrated semiconductor device having co-planar device surfaces

Method of assembling a plurality of semiconductor devices having different thickness

A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).

Single component developer for use with ghost exposure

The present invention provides an ozone processing monitor and a method of using the same in ozone processing to determine whether sufficient ozone treatment has occurred on a production part needing ozone treatment. The ozone processing monitor of the present invention comprises an ozone sensitive material which is capable of thinning, bleaching, forming an oxide layer or undergoing any other physical or chemical change upon exposure to ozone, wherein said physical or chemical change produces a visible color change of said ozone sensitive material which can be monitored during or following ozone processing. The color change of the ozone sensitive material can be compared to standards to determine if too little, too much or appropriate ozone treatment has occurred.

Monitor for verification of ozone reaction

Non-aqueous cleaning compositions capable of removing cured polyimides and other polymers from a metal circuitry containing substrate such as a semiconductor device for rework and other purposes without any significant adverse affect on the circuitry are provided consisting essentially of alkanolamines, preferably monoethanolamine or monoethanolamine-diethanolamine mixtures and optionally with a solvent such as NMP in an amount less than about 50% by weight. A method is also provided for removing polyimide coatings and other polymers from semiconductor devices using the cleaning compositions of the invention.

Method for removal of cured polyimide and other polymers

Single component developer for copolymer resists

Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the Chemical Mechanical Polish (CMP) process to dissolve the slurry and etch the abrasive particles.

Apparatus for removing slurry particles

A composition of matter comprising a polyamic acid/ester having an amide pendant group directly substituting an acid site of the polyamic acid is provided, which composition when cured provides a colored polymer film when the amide group is a chromophore. The resulting polymer which may be applied as a film to semiconductor chips to provide an optically sensitive semiconductor chip comprises a partially imidized polyamic acid wherein an amide pendant group is directly attached to one acid moiety of the polyamic acid and the other acid group imidized with the adjacent amino group of the polyamic acid. The polymers are useful as optical filters on semiconductor chips and for photoresist applications.

Environmentally stable optical filter materials

Disclosed is the use of a removable passivating layer in multichip packaging and CUBE applications. The process takes advantage of the fact that various metal ions will react with the carboxylic acid groups of various polyimide precursors. The polyimide will cure at a first temperature and the system may be manipulated and tested. At a later point, the polyimide is subjected to a second, higher temperature in order to decompose or completely destroy the polyimide.

Removable passivating polyimide coating and methods of use

The present invention relates to wear-through detection in multilayered parts. This invention specifically encompasses, in one aspect, wear-through detection in semiconductor vacuum processing systems in which a wear indicator that will release a detectable constituent upon exposure to processing conditions is used inside the semiconductor vacuum processing tool. This invention permits real time detection of wear during operation of semiconductor vacuum processing equipment.

Wear-through detector for multilayered parts and methods of using same

Method of removing slurry particles

There is provided, a stabilized multi-layered colored filter structure useful in a digital color camera and method for making same. The method involves effecting reaction between a polyfunctional organosilicon material, such as a hexaorganosilazane with at least one phenolic resist containing an organic dye color forming filter, in a multi-layered structure of color filters on a silicon chip.

Stabilized multi-layered structure of color filters on a silicon chip

Growing community of inventors

Richmond, VT, United States of America

Harold G Linde