Rca Inc.

Other

Harold E Temple

Samuel Berkman

Kyong-Min Kim

Robert A Frosch

Michael T Duffy

An improved liner for crucibles and dies used to melt silicon comprising one or more sheets of graphite each of which has on at least the surface facing the silicon melt a layer of silicon nitride or silicon oxynitride.

Silicon melting crucible

An improved apparatus characterized by an R-F coil, a crucible for confining a silicon melt, and a susceptor for supporting the crucible facilitating an electrical coupling of the coil with the melt. The susceptor comprises a pair of susceptor halves of a thickness less than two skin depths, each being the mirror image of the other, disposed in mutually opposed, electrically insulated relation, while the crucible comprises a quartz body supported by the graphite susceptor, whereby the R-F coil is electrically coupled with the melt.

Apparatus for use in the production of ribbon-shaped crystals from a

In combination with a susceptor particularly suited for use in growing a ribbon crystal employing edge-defined film-fed growth techniques and characterized by a susceptor including a die through which a melt is drawn for forming a crystal ribbon, a pair of jets for directing a stream of fluid coolant along a path extended to impinge on the susceptor in close proximity with the die in non-incident relation with the crystal being grown.

Means for growing ribbon crystals without subjecting the crystals to

Apparatus for pulling a ribbon shaped crystal from a melt of the same downwardly through a shaping guide having a 'V' shaped longitudinal trough for containing the melt. The inner wall of the trough is a die set having a longitudinal slit at the apex of the 'V'.

Apparatus for the production of ribbon shaped crystals

Mechanical components, e.g. die and/or crucible or the like structures with which single silicon crystals are grown from the melt as shaped articles in thin sheet or ribbon geometry, are advantageously comprised, for their material of construction, of a suitable thermally stable and inert foundation substrate coated or provided on at least the silicon-contacting surface(s) thereof with a thin, uniform, integral surface layer deposit of pyrolitic silicon nitride (Si.sub.3 N.sub.4) obtained by the chemical vapor deposition (i.e., 'CVD') technique.

Growing community of inventors

Trenton, NJ, United States of America

Harold E Temple