Avco Corporation

Harold E DeBolt

Raymond J Suplinskas

James A Cornie

Thomas W Henze

Albert W Hauze

Joseph Morrissey

The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.

Method of applying a carbon-rich surface layer to a silicon carbide

This invention relates to a process control system and method of controlling a chemical vapor deposition (CVD) process where a coating is deposited on a substrate heated by passing a current through the substrate to create a heating zone. The control system relies on detecting a signal induced on the coated substrate outside of the heating zone and using the induced signal to control one or more process parameters.

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Boulder, CO, United States of America

Harold E DeBolt