International Business Machines Corporation

Harold D Edmonds

Gary Markovits

Murlidhar V Kulkarni

Robert H Cadwallader

Vincent J Lyons

An infrared Fourier transform spectrometer is used to measure the absorbance spectrum of a sample of unknown oxygen or carbon content. From the spectrum, the roughness of the wafer is defined, and such roughness definition is then used to calculate the oxygen or carbon content. The roughness can be defined by using the slope of the absorbance spectrum or by the degree of shift of the baseline of the oxygen or carbon peak.

Method for determining oxygen and carbon in silicon semiconductor wafer

A new spectrometer station for semiconductor wafers is provided that permits operation in both the reflective and absorption modes either simultaneously or sequentially while the wafer is in a horizontal position. The wafer is positioned in the station on a movable platform. Positioned under the platform is an infrared detector. An optical system over the platform focuses an interferometer beam at that portion of the wafer positioned right over the detector. It also directs light from the beam reflected off the top surface of the wafer at a second infrared detector. An orientor rotates the wafer on the platform so that movement of the wafer by the orientor and movement of the platform allows any part of the wafer to be examined as a test point by the spectrometer.

Dual mode spectrometer test station

A multi-layer metallized substrate comprises a matrix of sintered silicon particles joined by a thin insulating layer of silicon dioxide or silicon nitride. Semiconductor circuit chips are bonded to the surface of the substrate to form an electrically connected, unitary integrated circuit module structure.

Multi-layered metallized silicon matrix substrate

Compound semiconductor bodies are formed by bonding a layer of supporting material to the two opposite faces of a semiconductor wafer and then cutting the semiconductor wafer into two parts in a plane parallel to said faces. The cut surface of each part is then polished.

Process for forming compound semiconductor bodies

Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800.degree.-1150.degree. C. for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600.degree. C., and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture.

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Hopewell Junction, NY, United States of America

Harold D Edmonds