Qualcomm Incorporated

International Business Machines Corporation

Intel Corporation

Harmander Singh

Kenneth Marvin Gainey

Alan J Drake

Fadi Hikmat Gebara

Jeremy Daniel Schaub

Robert Matthew Senger

John Patrick Keane

Milena Vratonjic

Suresh Kumar Venkumahanti

Gianfranco Gerosa

Ashish Bajaj

Mohammed Hasan Taufique

Ian David O'Donnell

Sebastien Weyland

Mohammad Mehedi Hasan

Abhiman Pratap Kotwal

Gautam Kumar

Mohamed Roumi

A programmable logic circuit such as a finite state machine is provided that is configured to determine a memory array power-up sequence from a configuration signal to successively enable each memory array. A delay circuit triggers an initial memory bank in each enabled memory array to power-up without a delay. The delay circuit then counts responsive to a clock to determine a delay between a successive triggering of remaining memory banks in each enabled memory array to power-up.

Current in-rush mitigation for power-up of embedded memories

In some aspects, a method for adjusting an operating frequency of a memory controller is provided, wherein a graphics processing unit (GPU) accesses a memory via the memory controller. The method includes monitoring activity of the GPU to determine an active time of the GPU, comparing the determined active time with an active threshold, and, if the determined active time is greater than the active threshold, increasing the operating frequency of the memory controller.

Power and performance aware memory-controller voting mechanism

Described is an apparatus comprising: a voltage level detector to monitor a first power supply node; and a voltage level protector, coupled to the voltage level detector, to protect the voltage level detector from receiving a power supply on the first power supply node above a pre-defined threshold voltage. Described is also a voltage level protector to protect a first power supply node from receiving a power supply above a pre-defined threshold voltage, the voltage level protector comprising: a first p-type device coupled to a second power supply node, the second power supply node to receive a power supply higher than the power supply on the first power supply node; and a second p-type device coupled in series to the first p-type device, the second p-type further coupled to the first power supply node, which is for coupling to a voltage level detector.

Voltage detector with high voltage protection

Systems and methods for optimizing a memory rail voltage are disclosed. The system may comprise a plurality of sensor cells, each sensor cell comprising at least one bitcell replica having a predefined data retention voltage higher than a data retention voltage of a similar memory bit cell. The sensor cells may be configured to provide an output based on a sensor rail voltage higher than the predefined data retention voltage. The system may further comprise a controller operably coupled to a power management circuit and configured to adjust the memory rail and the sensor rail voltages. The controller may be further configured to compare an expected value to the sensor indication. The controller may decrease the sensor rail voltage and the memory rail voltage based on the indication until a sensor indicates a bitcell replica has failed, indicating an optimum memory rail voltage has been reached.

System and method for dynamically adjusting memory rail voltage

Correction of delay-based metric measurements using delay circuits having differing metric sensitivities provides improved accuracy for environmental and other circuit metric measurements that used delay lines. A delay line measurement, which may be a one-shot measurement or a ring oscillator frequency measurement is performed either simultaneously or sequentially using at least two delay lines that have differing sensitivities to a particular metric under measurement. A correction circuit or algorithm uses the measured delays or ring oscillator frequencies and corrects at least one of the metric measurements determined from one of the delays or ring oscillator frequencies in conformity with the other delay or ring oscillator frequency. The delays may be inverter chains, with one chain having a higher sensitivity to supply voltage than the other delay chain, with the other delay chain having a higher sensitivity to temperature. Temperature results can then be corrected for supply voltage variation and vice-versa.

Correction of delay-based metric measurements using delay circuits having differing metric sensitivities

A method and system for calibration of multi-metric sensitive delay measurement circuits provides for reduction of process-dependent variation in delays and their sensitivities to circuit metrics. A process corner for the delay circuit(s) is determined from at least one delay measurement for which the variation of delay due to process variation is previously characterized. The delay measurement(s) is made at a known temperature(s), power supply voltage(s) and known values of any other environmental metric which the delay circuit is designed to measure. Coefficients for delay versus circuit metrics are then determined from the established process corner, so that computation of circuit metric values from the delay measurements have improved accuracy and reduced variation due to the circuit-to-circuit and/or die-to-die process variation of the delay circuits.

Calibration of multi-metric sensitive delay measurement circuits

Growing community of inventors

Austin, TX, United States of America

Harmander Singh