Nxp B.v.

Harish Nandagopal

Didier Salle

Lukas Frederik Tiemeijer

Waqas Hassan Syed

Stephane Damien Thuriés

Ralf Maria Theodoor Pijper

An integrated circuit device includes an integrated circuit device die and a substrate. The integrated circuit device die includes a plurality of first contact pads. The first contact pads include a pair of first signal contact pads configured to provide a differential signal port of the integrated circuit device die. The differential signal port is configured to operate at a predetermined frequency. The substrate includes a plurality of second contact pads on a first surface of the substrate. The second contact pads are configured to be soldered to a printed circuit board, and include a pair of second signal contact pads. The integrated circuit device die is affixed to a second surface of the substrate via the first contact pads. The substrate includes a pair of circuit paths that each couple one of the first signal contact pads to an associated one of the second signal contact pads. The pair of circuit paths each have a length to provide a half-wave matching network at the predetermined frequency to match a single-ended signal at the pair of second signal pads to the differential signal port.

Integrated millimeter-wave dual-mode matching network

A compact planar balun formed on a substrate including a hairpin-shaped conductive microstrip and a single-ended contact. The hairpin-shaped conductive microstrip includes first and second linear segments integrally formed with a U-shaped segment, and a single-ended contact is conductively coupled at a location along the first linear segment. The first and second linear segments each have a first characteristic impedance and are in parallel with each other having a first end forming first and second differential contacts and having a second end. The U-shaped segment has a second characteristic impedance that is less than the first characteristic impedance in order to achieve proper scatter parameter alignment. The U-shaped segment may be generally formed thicker or wider than the linear segments to achieve a reduced characteristic impedance. In the alternative or in addition, co-planer ground metal is formed closer to the U-shaped segment to achieve a reduced characteristic impedance.

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Veldhoven, Netherlands

Harish Nandagopal