Radiation Monitoring Devices, Inc.

Harvard College

The University of Chicago

Brookhaven Science Associates, Lcc

Harish B Bhandari

Vivek V Nagarkar

Roy Gerald Gordon

Olena E Ovechkina

Henry J Frisch

John M Smedley

Klaus Attenkofer

Yeung Au

Youbo Lin

Hoon Y Kim

Valeriy Gaysinskiy

Stuart Miller

Zsolt Marton

Matthew Marshall

Oleg Maksimov

Scintillators that are not thermally damaged by heat generated by a predetermined radiation pulse impinging on the scintillator.

High thermal conductivity scintillators for imaging

Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

Alkali semi-metal films and method and apparatus for fabricating them

Large detection area, high spatial resolution, high dynamic range and low noise neutron detectors are disclosed. Curved detectors that minimize parallax errors and boundary regions without sacrificing its intrinsic resolution or the efficiency are also disclosed.

Layered converter for high-resolution neutron radiography

An antireflective structure and a fabrication method thereof are disclosed. In one aspect, the antireflective structure includes a substrate, a buffer layer on the substrate, and an anticorrosion layer on the buffer layer, wherein the corrosion resistant layer comprises a densely packed cubic lattice structure. In one aspect, the fabrication method includes depositing a first buffer layer on a substrate in an e-beam deposition process, and depositing a first anticorrosion layer on the first buffer layer in an e-beam deposition process, wherein the substrate comprises sapphire, the first corrosion resistant layer comprises lutetia, and the first buffer layer comprise silicon carbide.

Corrosion resistant antireflection coating and fabrication method thereof

Strontium halide scintillators, calcium halide scintillators, cerium halide scintillators, cesium barium halide scintillators, and related devices and methods are provided.

Doped cesium barium halide scintillator films

A neutron detector and a method for fabricating a neutron detector. The neutron detector includes a photodetector, and a solid-state scintillator operatively coupled to the photodetector. In one aspect, the method for fabricating a neutron detector includes providing a photodetector, and depositing a solid-state scintillator on the photodetector to form a detector structure.

Neutron detector and fabrication method thereof

An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

Self-aligned barrier and capping layers for interconnects

Zinc telluride scintillators and related devices and methods are provided.

Zinc telluride scintillators

An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.

Growing community of inventors

Brookline, MA, United States of America

Harish B Bhandari