Qualcomm Incorporated

Hari Rao

Jung Pill Kim

Xiaochun Zhu

Seung Hyuk Kang

Sei Seung Yoon

Kangho Lee

Xia Li

Tae Hyun Kim

Matthew Michael Nowak

Jungwon Suh

Taehyun Kim

Mohamed Hassan Abu-Rahma

Nan Chen

Dongkyu Park

Wuyang Hao

Sami Khawam

Ioannis Nousias

Venugopal Boynapalli

Wah Nam Hsu

Asaf Ashkenazi

Steven Mark Millendorf

Nicholas K Yu

Siamack Haghighi

Yun Du

Chun Yu

Francois Ibrahim Atallah

Keith Alan Bowman

Zhiqin Chen

Thomas R Toms

Esin Terzioglu

Cheng Zhong

Ritu Chaba

Hoan Huu Nguyen

Anosh Bomi Davierwalla

Chang Ho Jung

Venkatasubramanian Narayanan

Kevin Bowles

Bilal Zafar

Sung Hwan Cho

Vijay Bantval

Sagar Suresh Sabade

Raghavan Thirumala

Sean Li

Ken Lee

Robert J Walden

Medhi Sani

Seung Duk Lee

Jung Pil Kim

Renaud Francois Henri Gelin

The disclosure relates to a latch including a first inverter with a first pair of field effect transistors (FETs) configured with a first channel width to length ratio (W/L), and a second inverter with a second pair of FETs configured with a second W/L different than the first W/L. Another latch includes first and second inverters; a first negative feedback circuit including first and second FETs coupled between first and second voltage rails, the input of the first inverter coupled between the first and second FETs, and the first and second FETs including gates coupled to an output of the first inverter; and a second negative feedback circuit including third and fourth FETs coupled between the first and second voltage rails, the input of the second inverter coupled between the third and fourth FETs, and the third and fourth FETs including gates coupled to an output of the second inverter.

Fault resilient flip-flop with balanced topology and negative feedback

A triple modular redundancy (TMR) flip-flop includes a set of master-gate-latch circuits including a first set of inputs to receive a first digital signal, and a second set of inputs to receive a clock; and a voting logic circuit including a set of inputs coupled to a set of outputs of the set of master-gate-latch circuits, and an output to generate a second digital signal based on the first digital signal. Another TMR flip-flop includes a set of master-gate-latch circuits to receive a set of digital signals in response to a first edge of a clock, respectively; and latch the set of digital signals in response to a second edge of the clock, respectively; and a voting logic circuit to receive the latched set of digital signals; and generate a second digital signal based on a majority of logic levels of the latched first set of digital signals, respectively.

Triple modular redundancy flip-flop with improved power performance area and design for testability

Certain aspects of the present disclosure provide apparatus and methods for performing memory read operations. One example method generally includes precharging a plurality of memory columns during a precharging phase of a read access cycle. The method also includes sensing first data stored in a first memory cell of a first memory column of the plurality of memory columns during a memory read phase of the read access cycle, and sensing second data stored in a second memory cell of a second memory column of the plurality of memory columns during the same memory read phase of the read access cycle.

High bandwidth double-pumped memory

A multi-bit adder apparatus comprising: a full adder stage configured to receive at least some of a plurality of least significant bits (LSBs) of first data and second data; and a half adder stage configured to receive at least some of a plurality of most significant bits (MSBs) of the first data and the second data; a carry generation stage coupled to the full adder stage and the half adder stage, wherein the carry generation stage includes at least one serial propagate-generate (PG) component; and a post summing stage coupled to the carry generation stage and the half adder stage and configured to generate a partial sum output of the first data and the second data, wherein a number of the at least some of the plurality of LSBs is different from a number of the at least some of the plurality of MSBs.

Energy-efficient variable power adder and methods of use thereof

A reconfigurable instruction cell array (RICA) includes a plurality of switch boxes. Each switch box includes an instruction cell and a switch fabric configurable according to a configuration word stored in each switch box. The switch boxes are arranged into serial loading sets such that the switch boxes in each serial loading set are configured to form a multi-bit shift register chain for serial shifting the corresponding configuration words.

Serial configuration of a reconfigurable instruction cell array

Systems and method for reading/sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells. A MRAM includes a reference circuit comprising at least one magnetic storage cell, wherein each magnetic storage cell in the MRAM is programmed to the same state. The reference circuit includes a load element coupled to the magnetic storage cell, wherein the load element is configured to establish a reference voltage during a read operation.

MRAM sensing with magnetically annealed reference cell

An output switch fabric is disclosed that comprises an interleaved plurality of multiplexers for switching channels between first and second busses. The busses run in tracks that form a grid pattern. The interleaving of the multiplexers is arranged according to the grid pattern for the busses.

Switching fabric for embedded reconfigurable computing

A memory device having a local current sink is disclosed. In a particular embodiment, an electronic device is disclosed. The electronic device includes one or more write drivers. The electronic device includes at least one Magnetic Tunnel Junction (MTJ) coupled to a bit line and coupled to a source line. The electronic device also includes a current sink circuit comprising a single transistor, the single transistor coupled to the bit line and to the source line.

Memory device having a local current sink

Various aspects of dynamic power reduction in a bus communication architecture are described herein as embodied in an XBAR architecture that provides flexible gating of multiple paths and repeater circuitry to allow any of a number of selected clients to communicate with any of the other interconnected clients while reducing dynamic power consumption by disabling unused repeater circuitry in the bus communication architecture.

Method and apparatus for dynamic power saving with flexible gating in a cross-bar architecture

A first write driver applies a first voltage above a fixed potential to a first terminal. A second write driver applies a second voltage that is higher above the fixed potential than the first voltage to a second terminal. There is at least one magnetic tunnel junction (MTJ) structure coupled at the first terminal at a first side to the first write driver and coupled at the second terminal at a second side to the second write driver. The first side of the MTJ structure receives the first voltage and the second side of the MTJ structure receives a ground voltage to change from a first state to a second state. The second side of the MTJ structure receives the second voltage and the first side of the MTJ structure receives the ground voltage to change from the second state to the first state.

Asymmetric write scheme for magnetic bit cell elements

A particular method of accessing a multi-port non-volatile memory device includes executing a first memory operation with respect to a first memory cell while executing a second memory operation with respect to a second memory cell. The first memory operation is via a first port and the second memory operation is via a second port. The first memory cell includes a first non-volatile memory that includes a first resistive memory structure. The second memory cell includes a second non-volatile memory that includes a second resistive memory structure. The first memory cell and the second memory cell are each accessible via the first port and the second port.

Multi-port non-volatile memory that includes a resistive memory element

A reconfigurable instruction cell array (RICA) is provided that includes a plurality of master switch boxes that are configured to read and write from a plurality of buffers through a cross-bar switch. A master built-in-self-test (MBIST) engine is configured to drive a test word into the write path of at least one master switch box and to control the cross-bar switch so that the driven test word is broadcast to all the buffers for storage. The MBIST engine is also configured to retrieve the stored test words from the buffers through a read bus within the cross-bar switch.

Buffer testing for reconfigurable instruction cell arrays

A system and method to initiate a housekeeping operation at a mobile device is disclosed. In a particular embodiment, a method at a mobile device includes modifying a scheduled housekeeping operation in response to determining that the mobile device is in a charging mode.

System and method to initiate a housekeeping operation at a mobile device

A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device includes a plurality of memory cells. At least one of the memory cells includes a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element. Each of the first non-volatile memory and the second non-volatile memory is accessible via multiple ports.

Memory cell that includes multiple non-volatile memories

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San Diego, CA, United States of America

Hari Rao