Micron Technology Incorporated

Intel Corporation

Hari Giduturi

Mingdong Cui

Fabio Pellizzer

Jahanshir J Javanifard

Jeffrey Edward Koelling

Innocenzo Tortorelli

Vijayakrishna J Vankayala

Ferdinando Bedeschi

Corrado Villa

Ramin Ghodsi

Riccardo Muzzetto

Kerry Dean Tedrow

Robert J Gleixner

Joseph M McCrate

Nathan Joseph Sirocka

Ramachandra Rao Jogu

John Fredric Schreck

Hernan Adolfo Castro

Hongmei Wang

Jason M Brown

Mark E Bauer

Duane R Mills

Mostafa Naguib Abdulla

Richard Keith Dodge

Brian G Johnson

Mathew B Nazareth

Arvind Muralidharan

Bret Addison Johnson

Steve Wells

Muneer Ahmed

Balasubramanian Venkataraman

Dave Ward

Methods, systems, and devices for varying-polarity read operations for polarity-written memory cells are described. Memory cells may be programmed to store different logic values based on applying write voltages of different polarities to the memory cells. A memory device may read the logic values based on applying read voltages to the memory cells, and the polarity of the read voltages may vary such that at least some read voltages have one polarity and at least some read voltages have another polarity. The read voltage polarity may vary randomly or according to a pattern and may be controlled by the memory device or by a host device for the memory device.

Varying-polarity read operations for polarity-written memory cells

The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a p-type transistor having a first gate, a first n-type transistor having a second gate, and a second n-type transistor having a third gate, and pre-decoder circuitry configured to provide a bias condition for the first gate, the second gate, and the third gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises zero volts for the first gate, the second gate, and the third gate for a positive configuration for the memory cells and a negative voltage for the third gate and zero volts for the first gate and the second gate for a negative configuration for the memory cells.

Pre-decoder circuitry

A memory device standby procedure can include idling a first memory device in a low-power standby mode, the first memory device coupled to a memory interface that couples multiple memory devices to a host and includes a command line (CA) and a standby exit line (EX), and the first memory device can include a primary die coupled to multiple secondary dies using an intra-package bus. At the first memory device, the procedure can include waking receiver circuitry on the primary die in response to a state change on the standby exit line, and sampling the command line using logic circuitry on the primary die. When a wakeup message on the command line comprises a chip identification that corresponds to the first memory device, the procedure can include initiating a standby exit procedure for the first memory device.

Standby exit for memory die stack

A memory device includes a substrate with two or more memory die stacked in a three-dimensional stacked (3DS) configuration. The memory device includes a clock input configured to receive a clock from a host device. The memory device also includes a command input configured to receive command and address bits from the host device. The two or more memory die each include its own plurality of memory cells. Furthermore, each of the two or more memory die include a local control circuitry configured to receive or transmit a divided clock that is based on the clock.

Divided clock transmission in a three-dimensional stacked memory device

Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

Decoder architecture for memory device

The application relates to an architecture that allows for less precision of demarcation read voltages by combining two physical memory cells into a single logical bit. Reciprocal binary values may be written into the two memory cells that make up a memory pair. When activated using bias circuitry and address decoders the memory cell pair creates current paths having currents that may be compared to detect a differential signal. The application is also directed to writing and reading memory cell pairs.

Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages

A packaged memory device can include a primary memory die coupled to a shared intra-package communication bus and coupled to an external host device using a host interface bus, and the host interface bus can include a host clock channel. The memory device can include multiple secondary dies coupled to the intra-package communication bus, and each of the secondary dies can be configured to receive the same messages from the primary memory die using the intra-package communication bus. The primary memory die can send a first message to, or receive a first message from, a particular one of the secondary dies using the intra-package communication bus, and the first message can include a first chip identification field that exclusively indicates the particular one of the secondary dies.

Intra-package memory die communication structures

A device includes a first memory die and a second memory die directly coupled to the first memory die via a first bus. The device also includes a second bus directly coupled to the first memory die. The first memory die includes a first trim circuit that when in operation adjusts a delay of signal transmission by the first memory die to a first value, while the second memory die comprises a second trim circuit that when in operation adjusts a delay of signal transmission by the second memory die to a second value.

Tuned datapath in stacked memory device

A memory system can include a stack of memory dies such as including a primary die and two or more secondary dies. The primary die can communicate with an external host device and with the secondary dies. In an example, the primary die can issue a command to the secondary dies using a first command message that includes an opcode field specifying a memory operation, a first chip identification field specifying a selected first die of the secondary dies, and one or more operands. In an example, each of the secondary dies receives the same first command message.

Memory die stack chip id-based command structure

A semiconductor device includes a memory partition. The semiconductor device further includes a plurality of registers. A first register of the plurality of registers, when in operation, controls an operation associated with the memory partition. The semiconductor device additionally includes a memory controller. When in operation, the memory controller accesses a first location of the memory partition concurrently with accessing the first register.

Register operation in memory devices

A memory system may include multiple memory cells to store logical data and cycle tracking circuitry to track a number of cycles associated the memory cells. The cycles may be representative of one or more past accesses of the memory cells. The memory system may also include control circuitry to access the memory cells. Accessing of the memory cell may include a read operation, a write operation, or both. During the accessing of the memory cell, the control circuitry may determine a voltage parameter of the access based at least in part on the tracked number of cycles.

Memory cycling tracking for threshold voltage variation systems and methods

The present disclosure includes apparatuses, methods, and systems for memory cell programming that cancels threshold voltage drift. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of two possible data states by applying a first voltage pulse to the memory cell, wherein the first voltage pulse has a first polarity and a first magnitude, and applying a second voltage pulse to the memory cell, wherein the second voltage pulse has a second polarity that is opposite the first polarity and a second magnitude that can be greater than the first magnitude.

Memory cell programming that cancels threshold voltage drift

Systems, methods, and apparatus related to selecting memory cells in a memory array of a memory device. In one approach, bias circuitry generates a voltage on an access line used to select a memory cell for programming. During programming, a controller connects a boost capacitor to the access line by controlling a switch. Connecting the boost capacitor causes an increase in the rate of discharge of the access line (e.g., discharge of a word line to a negative voltage). After programming, the controller disconnects the boost capacitor from the access line, and the boost capacitor is pre-charged in preparation for a next programming operation (e.g., on the same or a different memory cell).

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Folsom, CA, United States of America

Hari Giduturi