Intel Corporation

Harel Frish

Haisheng Rong

John Heck

Ling Liao

Assia Barkai

Judson D Ryckman

Mahesh Krishnamurthi

Oshrit Harel

Jeffrey B Driscoll

George A Ghiurcan

Yun-Chung Na

Han-Din Liu

Wenhua Lin

Jonathan K Doylend

I-Wei Andy Hsieh

Yoel Chetrit

Charles H Dennison

Sansaptak W Dasgupta

Khaled Ahmed

Ansheng Liu

Derchang Kau

Thomas L Sounart

Anup Pancholi

Alexander Krichevsky

Boping Xie

Olufemi I Dosunmu

Hari Mahalingam

Pierre Doussiere

Ranjeet Kumar

Hasitha Jayatilleka

Kelly Christopher Magruder

Reece DeFrees

Michael E Favaro

Pegah Seddighian

Paul R West

Optical receiver packages and device assemblies that include photodetector (PD) chips having focus lenses monolithically integrated on PD die backsides are disclosed. An example receiver package includes a support structure, a PD die, and an optical input device. The PD die includes a PD, integrated proximate to a first face of the PD die, and further includes a lens, integrated on, or proximate to, an opposite second face. The first face of the PD die faces the support structure, while the second face ('backside') faces the optical input device. The optical receiver architectures described herein may provide an improvement for the optical alignment tolerance issues, especially for high-speed operation in which the active aperture of the PD may have to be very small. Furthermore, architectures described herein advantageously enable integrating a focus lens in a PD die that may be coupled to the support structure in a flip-chip arrangement.

Optical receiver package with backside lens-integrated photodetector die

In embodiments, an optoelectronic apparatus may include a substrate with a first side and a second side opposite the first side; a photodetector disposed on the first side of the substrate, the photodetector to convert a light signal into an electrical signal; and a dielectric metasurface lens etched into the second side of the substrate, the dielectric metasurface lens to collect incident light and focus it through the substrate onto the photodetector.

Optical receiver employing a metasurface collection lens having concentric belts or rings

There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.

Current channel for III-V silicon hybrid laser

A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

III-N multichip modules and methods of fabrication

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

Mechanisms for refractive index tuning semiconductor photonic devices

Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler including an optical waveguide to guide light to an optical fiber. In embodiments, the optical waveguide includes a tapered segment to propagate the received light to the optical fiber. In embodiments, the tapered segment is buried below a surface of a semiconductor substrate to transition the received light within the semiconductor substrate from a first optical mode to a second optical mode to reduce a loss of light during propagation of the received light from the optical waveguide to the optical fiber. In embodiments, the surface of the semiconductor substrate comprises a bottom planar surface of a silicon photonic chip that includes at least one or more of passive or active photonic components. Other embodiments may be described and/or claimed.

Optical device including buried optical waveguides and output couplers

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.

Semiconductor photonic devices using phase change materials

Some embodiments of the present disclosure describe a tapered waveguide and a method of making the tapered waveguide, wherein the tapered waveguide comprises a first and a second waveguide, wherein the first and second waveguides overlap in a waveguide overlap area. The first and second waveguides have a different size in at least one dimension perpendicular to an intended direction of propagation of electromagnetic radiation through the tapered waveguide. Across the waveguide overlap area, one of the waveguides gradually transitions or tapers into the other.

Waveguide transition structure and fabrication method

Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler. In some embodiments, the device may include an optical waveguide to transmit light input from a light source. The optical waveguide may include a semiconductor layer, having a trench with one facet that comprises an edge formed under an approximately 45 degree angle and another facet formed substantially normal to the semiconductor layer. The edge may interface with another medium to form a mirror to receive inputted light and reflect received light substantially perpendicularly to propagate the received light. Other embodiments may be described and/or claimed.

Optical coupler

Embodiments of the present disclosure are directed toward techniques and configurations for an optical device having a semiconductor layer to propagate light and a mirror disposed inside the semiconductor layer and having echelle grating reflective surface to substantially totally internally reflect the propagating light inputted by one or more input waveguides, to be received by one or more output waveguides. The waveguides may be disposed in the semiconductor layer under a determined angle relative to the mirror reflective surface. The determined angle may be equal to or greater than a total internal reflection angle corresponding to the interface, to provide substantially total internal reflection of light by the mirror. The mirror may be formed by an interface of the semiconductor layer comprising the mirror reflective surface and another medium filling the mirror, such as a dielectric. Other embodiments may be described and/or claimed.

Optical device using echelle grating that provides total internal reflection of light

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Qiryat Gat, Israel

Harel Frish