International Business Machines Corporation

Other

Nxp B.v.

Harbans S Sachdev

Krishna Gandhi Sachdev

Ranee W Kwong

Robert Neal Lang

Leo L Linehan

Herbert R Anderson, Jr

Ratnam Sooriyakumaran

Willard E Conley

Premlatha J Jagannathan

Wayne Martin Moreau

Robert Lavin Wood

Lawrence D David

John Patrick Hummel

Scott Arthur MacDonald

Mark A Takacs

Richard B Booth

Mark O Neisser

Joel R Whitaker

Steve S Miura

John C Forster

Hiroshi Ito

K Paul Muller

Gregory Breyta

Mahmoud M Khojasteh

Charles Hampton Perry

Harold G Linde

Ari Aviram

Ahmad D Katnani

James Allan Bruce

Carlton G Willson

Robert W Nufer

William R Brunsvold

Daniel Joseph Dawson

Hubert Schlosser

Clinton David Snyder

Richard D Kaplan

John Martin Burns

Constance J Araps

Brian H Desilets

Renuka S Divakaruni

Christopher F Lyons

Walter E Mlynko

Mark S Chace

Nicholas J Clecak

Michael L Kerbaugh

Randolph J Smith

Elwood Herbert Macy

Arnold I Baise

Daniel P Kirby

Stanley E Perreault

Melvin W Montgomery

David Paul Merritt

Darbha Suryanarayana

Sundar Mangalore Kamath

Jagannathan Premlatha

Moahmoud Mostafa Khojasteh

Anton Nendaic

Mark A Wizner

Mani R Gupta

Stoyan M Zalar

Felice J Mancaruso

Susan A Sanchez

Gerard V Capogna

Tanya N Lee

Richard A Cormack

Leo J Kadehjian

Howard Shillingford

Garkay Joseph Leung

Mary Matera-Longo

Richard J Kvitek

John Rapp

Linda K Somerville

Steve S Muira

The present invention relates to a process that minimizes the cracking of low-k dielectric polymers. In an example embodiment, on a semiconductor substrate (200), there is a method of forming a composite dielectric disposed on a metal layer passivated with plasma deposited silicon oxide SiOx. The method comprises depositing a first layer of a first predetermined thickness of a spin-on dielectric on the metal layer protected with a plasma deposited silicon oxide SiO. Next a thin stress relief layer of a second predetermined thickness is disposed on the first layer of spin-on-dielectric. Upon the thin stress-relief layer, a second layer of a third predetermined thickness of spin-on dielectric is deposited. Low-k spin-on dielectrics may include hydrogen silsequioxane (HSQ) and methyl silsequioxane (MSQ).

Reduction of cracking in low-k spin-on dielectric films

This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Aqueous cleaning of polymer apply equipment

A process for the stoichiometric carbonation of a hydroxyaromatic material is provided which comprises the steps of (a) mixing together in a reaction vessel (1) a hydroxyaromatic material, (2) a sufficient amount of a dialkyl dicarbonate to give the desired degree of substitution, (3) a catalytic amount of an unhindered tertiary amine, and (4) a solvent, (b) stirring the reaction mixture, (c) precipitating the alkyl carbonate of the hydroxyaromatic material, and (d) recovering the alkyl carbonate of the hydroxyaromatic material.

Process for forming carbonates of hydroxyaromatic compounds

A multilevel high density interconnect structure of a semiconductor device or package including a substrate having at least one conductive feature therein, a film of a polyimide composition on the substrate and selected from the group consisting of a cured product of a polyamic acid and a cured product of a polyamic ester. The polyamic acid is prepared by reacting a stoichiometric excess of a linear aromatic diamine and aromatic dianhydride to form a first reaction product where the molar ratio of said diamine to said aromatic anhydride is in the range from 100:97 to 100:99.5 and then reacting the first reaction product with an aromatic anhydride. The polyamic ester is prepared by reacting a stoichiometric excess of a linear aromatic diamine and an aromatic diester diacyl chloride to form a second reaction product where the molar ratio of said diamine to said diester diacyl chloride is in the range from 100:97 to 100:99.5 and then reacting the second reaction product with aromatic anhydride. There is at least one interconnective conductive metallurgical feature in the film a polyimide composition in contact with said conductive feature in said substrate.

Low TCE polyimides as improved insulator in multilayer interconnect

Photosensitive silicon-containing resist compositions comprising hydroxyphenylsilsesquioxanes and siloxanes partially estersified with diazonaphthoquinone sulfonyloxy groups for imageable O.sub.2 RIE barrier films. Methods for forming image patterns on substrates using these photosensitive silicon-containing resist compositions are also provided.

Silicon-containing positive resist and use in multilayer metal structures

A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.

Method of forming sub-half micron patterns with optical lithography

A silicon-containing negative photoresist is used as the top imaging layer in a bilayer substrate patterning scheme. The photoresist is a single component resist in which the photoactive element is chemically bonded to the base polymer. In particular, an aromatic azide containing group is covalently bonded to the phenolic group of the poly(4-hydroxybenzyl)silsesquioxane (PHBS) via an esterification reaction. The new photoresist is easily synthesized and has the advantageous properties of aqueous base developability, excellent O.sub.2 RIE resistance, and high sensitivity to DUV, I-line and E-beam exposures.

Silicon containing negative resist for DUV, I-line or E-beam lithography

A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

Silicon containing positive resist for DUV lithography

Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.

Dry developable photoresist compositions and method for use thereof

A method for transferring a pattern through a photoresist layer in the fabrication of submicron semiconductor devices structures is disclosed. A photoresist is provided on a substrate and the same is imagewise exposed with a desired pattern to form exposed and unexposed patterned areas in the top surface of the photoresist. The photoresist is then baked to form cross-linked regions in the exposed pattern areas of the photoresist. Silylation is then performed to incorporate silicon into the unexposed patterned areas of the photoresist, wherein some incorporation of silicon occurs in the exposed patterned crosslinked areas of the photoresist. The patterned photoresist is subsequently etched using a high density, low pressure, anisotropic O.sub.2 plasma alone to produce residue-free images with vertical wall profiles in the photoresist. This method is particularly advantageous with RFI reactive ion etch systems.

Residue free vertical pattern transfer with top surface imaging resists

High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

Crosslinkable aqueous developable photoresist compositions and method

A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

Top coat for acid catalyzed resists

A process for making a compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

Process for making a compliant thermally conductive compound

New photosensitive polyimide compositions and processes of using the same in the fabrication of electronic components are provided. These compositions are comprised of ##STR1## containing polyamic acids and/or the corresponding hydroxy-polyamic esters, or hydroxypolyimides and a photoactive component as an additive or as covalently bonded functionality on the polymer chain. These compositions provide positive or negative patterning options and may be used as conventional resist materials, as imageable dielectric or passivating layers, as high Tg ion implant masks or as imageable lift-off layers in the fabrication of multilevel metal structures.

Photosensitive polyimide compositions

Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants. Methods for improved adhesion of polyimides are also disclosed.

Viscosity stable, essentially gel-free polyamic acid compositions

Growing community of inventors

Hopewell Junction, NY, United States of America

Harbans S Sachdev