Evonik Degussa Gmbh

Harald Stueger

Matthias Patz

Stephan Wieber

Christoph Walkner

Hartwig Rauleder

Ekkehard Mueh

Martin Trocha

Odo Wunnicke

Stephan Traut

Michael Coelle

Miriam Deborah Malsch

Jasmin Lehmkuhl

Stephan Herrmann

The present invention relates to compositions comprising at least one hydridosilane of the generic formula SiHwith n&#x2265;5 and m=(2n) and (2n+2) and at least one compound of the formula HB (OR)with R=C-C-alkyl, C-C-aryl, C-C-aralkyl, halogen, n=0, 1, 2, to processes for preparation thereof and use thereof.

Doped hydridosilane compositions, and method for producing same

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

Process for preparing higher halosilanes and hydridosilanes

The present invention provides processes for preparing carbon-containing hydridosilanes, in which an optionally boron- or phosphorus-doped hydridosilane is reacted without catalyst and reducing agent with at least one carbon source selected from linear, branched or cyclic carbosilanes, halogenated hydrocarbons, carbenes, alkyl azides, diazomethane, dimethyl sulphate or alcohols, the carbon-containing hydridosilane oligomers obtainable by the process and the use thereof.

Method for producing hydrosilanes containing carbon

The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer.

p-Doped silicon layers

The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SiX(with n&#x2267;3 and X&#x2550;F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'R&#x2033;Ywith a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R' and/or R&#x2033; are &#x2014;C-Calkyl, &#x2014;C-Caryl, &#x2014;C-Caralkyl, &#x2014;C-Caminoalkyl, &#x2014;C-Caminoaryl, &#x2014;C-Caminoaralkyl, and/or two or three groups R, R&#x2032; and R&#x2033; (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R&#x2032; or R&#x2033; is unequal &#x2014;CHand/or wherein bb) R and R&#x2032; and/or R&#x2033;' (if c=1) are &#x2014;C-Calkylene, &#x2014;C-Carylene, &#x2014;C-Caralkylene, &#x2014;C-Cheteroalkylene, &#x2014;C-Cheteroarylene, &#x2014;C-Cheteroaralkylene and/or &#x2014;N&#x2550;, or cc) (if a=b=c=0) R&#x2550;&#x2261;C-R&#x2032;&#x2033; (with R&#x2032;&#x2033;&#x2550;&#x2014;C-Calkyl, &#x2014;C-Caryl and/or &#x2014;C-Caralkyl), while forming a mixture comprising at least one halosilane of the generic formula SiX(with m&#x3e;n and X&#x2550;F, Cl, Br and/or I) and SiX(with X&#x2550;F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SiHwhile forming a hydridosilane of the generic formula SiH. The invention also relates to the hydridosilanes producible according to said method and to their use.

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Graz, Austria

Harald Stueger