Asm IP Holding B.v.

Harald Profijt

Jan Willem Maes

Qi Xie

Chiyu Zhu

David Kurt De Roest

Delphine Longrie

Timo Asikainen

Krzysztof Kachel

Han Wang

Julian Hsieh

David Kohen

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

Selective deposition of aluminum and nitrogen containing material

In some embodiments, a compound semiconductor is formed by diffusion of semiconductor species from a source semiconductor layer into semiconductor material in a substrate. The source semiconductor layer may be an amorphous or polycrystalline structure, and provides a source of semiconductor species for later diffusion into the other semiconductor material. Advantageously, such a semiconductor layer may be more conformal than an epitaxially grown, crystalline semiconductor layer. As a result, this more conformal semiconductor layer acts as a uniform source of the semiconductor species for diffusion into the semiconductor material in the substrate. In some embodiments, an interlayer is formed between the source semiconductor layer and the substrate, and then the interlayer is trimmed before depositing the source semiconductor layer. In some other embodiments, the source semiconductor layer is deposited directly on the substrate, and has an amorphous or polycrystalline structure.

Methods for forming semiconductors by diffusion

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Leuven, Belgium

Harald Profijt