Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Harald König

Alfred Lell

Sven Gerhard

Frank Singer

Herbert Brunner

Jörg Erich Sorg

Bernhard Stojetz

Clemens Vierheilig

Roland Schulz

Karsten Auen

Florian Peskoller

Christian Lauer

Roland Hüttinger

Muhammad Ali

Peter Brick

Jürgen Moosburger

Jens Ebbecke

André Somers

Christoph Eichler

Uwe Strauss

Marc Philippens

Andreas Löffler

Alvaro Gomez-Iglesias

Roland Enzmann

Johann Luft

Wolfgang Reill

Markus Horn

Mathias Kämpf

Martin Müller

Uwe Strauβ

Alexander Bachmann

Markus Arzberger

Günther Grönninger

Bernd Mayer

Christoph Walter

Tomasz Swietlik

Stephan Haneder

Markus Graul

Robin Fehse

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

Disclosed is an optoelectronic component comprising: Also disclosed is a method for producing an optoelectronic component.

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current Ifed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop Uoccurs at the section and at least part of said operating current Iflows through the assigned current regulating element and experiences an electrical resistance Rin the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature Thas a positive temperature coefficient dR/dT|. Alternatively or additionally, the resistance Ris greater than |ΔU/I, wherein ΔUis the change in the voltage drop Uat the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature Tby 1 K.

Diode laser and method for operating a diode laser

In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Semiconductor laser and production method for a semiconductor laser

In one embodiment, the semiconductor laser () comprises a semiconductor layer sequence () based on the material system AlInGaN with at least one active zone () for generating laser radiation. A heat sink () is thermally connected to the semiconductor layer sequence () and has a thermal resistance towards the semiconductor layer sequence (). The semiconductor layer sequence () is divided into a plurality of emitter strips () and each emitter strip () has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips () are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Semiconductor laser, operating method for a semiconductor laser, and method for determining the optimum fill factor of a semiconductor laser

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.

Method of autostereoscopic imaging and autostereoscopic illumination unit

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.

Edge-emitting semiconductor laser and method for the production thereof

A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 &#x3bc;m emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

Semiconductor laser diode

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Method of producing a semiconductor laser element, and semiconductor laser element

An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.

Edge emitting semiconductor laser chip

A laser arrangement has at least one laser diode apparatus with a side surface which laterally limits the laser diode apparatus. The laser arrangement has a plurality of active regions arranged laterally side by side and configured to generate radiation. The laser diode apparatus is arranged on a mount. The distance between the side surface and an edge which laterally limits the mount on the part of the side surface is shorter than the distance between the side surface and the active region closest to the side surface. Additionally or alternatively, the distance between the side surface and the edge is shorter than one of the distances between two adjacent active regions of the laser diode apparatus.

Growing community of inventors

Bernhardswald, Germany

Harald König