Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ams-osram International Gmbh

Harald Koenig

Alfred Lell

Bernhard Stojetz

Muhammad Ali

Christoph Eichler

Alvaro Gomez-Iglesias

Andreas Loeffler

Christian Lauer

André Somers

Guenther Groenninger

Uwe Strauss

Adrian Stefan Avramescu

Wolfgang Reill

In at least one embodiment, the radiation-emitting device comprises a laser bar for emitting laser radiation. The device further includes a waveguide having a core, a cladding, an entry face, and an exit face. The device may include a heat sink having a mounting side where the waveguide is applied thereon, the cladding being arranged at least above and below the core in relation to the mounting side. The device may be configured so that, during operation, the laser radiation impinges on the entry face of the waveguide and passes from there into the core. The core may include a conversion element configured to convert the laser radiation into secondary radiation. The waveguide may be configured to guide the laser radiation and/or the secondary radiation inside the core as far as the exit face by reflection at the interface between the cladding and the core.

Radiation-emitting device

In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.

Edge-emitting laser bar

An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

A method for producing a semiconductor chip () is provided, in which, during a growth process for growing a first semiconductor layer (), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (), such that a lateral variation of a material composition of the first semiconductor layer () is produced. A semiconductor chip () is additionally provided.

Method for producing a semiconductor chip and semiconductor chip

A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.

Laser diode

An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

Edge-emitting semiconductor laser

An edge emitting semiconductor laser comprising an active, radiation-generating zone (), and an common waveguide (), which is suitable for guiding the radiation generated in the active zone () within the semiconductor laser. The common waveguide () comprises a first n-doped layer () and a second n-doped layer (), which is arranged between the first n-doped layer () and the active zone (), wherein the refractive index nof the second n-doped layer () is greater than the refractive index nof the first n-doped layer () by a value dn.

Growing community of inventors

Bernhardswald, Germany

Harald Koenig