Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Shin-etsu Chemical Co., Ltd.

Harald Jäger

Toshio Shiobara

Berthold Hahn

Tsutomu Kashiwagi

Herbert Brunner

Volker Härle

Günter Waitl

Klaus Höhn

Jörg Erich Sorg

Markus Pindl

Alexandra Debray

Günther Waitl

Reinhold Brunner

Michael Zitzlsperger

Jürgen Moosburger

Bert Braune

Gertrud Kräuter

Thomas Zeiler

Daniel Leisen

Dieter Eissler

Albert Schneider

Matthias Winter

Thomas Höfer

Stephan Preuss

Stephan Preuβ

Raimund Schwarz

Hansjörg Schöll

Josef Schmid

Thomas Hofer

Stefan GRÖTSCH

Brunner Reinhold

In an embodiment a conversion element includes a grid having a plurality of openings, a plurality of conversion segments configured to convert a part of a primary radiation into a secondary radiation, wherein the conversion segments are arranged in the openings, wherein the conversion segments include a matrix material into which fluorescent particles are incorporated, wherein the fluorescent particles are sedimented in a sedimented layer and a semiconductor material, a plastic or a metal, wherein the grid terminates flush with the conversion segments.

Conversion element, optoelectronic component, method for producing a plurality of conversion elements, method for producing a plurality of optoelectronic components and method for producing an optoelectronic component

A method of producing an optoelectronic semiconductor component includes providing a carrier including two metal layers, wherein the metal layers are detachable from one another, securing an optoelectronic semiconductor chip on the first metal layer of the carrier, and mechanically detaching the second metal layer from the first metal layer.

Method of producing an optoelectronic semiconductor component, optoelectronic semiconductor component, and temporary carrier

A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.

Method for producing an optoelectronic component, and optoelectronic component

A method of producing a surface-mountable semiconductor component including providing an auxiliary carrier made with a plastics material; applying at least one insert and at least one optoelectronic component to a mounting surface of the auxiliary carrier; enclosing the optoelectronic component and the insert in a common molding, wherein the molding covers the optoelectronic component and the insert form-fittingly at least in places, the optoelectronic component and the insert are not in direct contact with one another, and the optoelectronic component and the insert are connected together mechanically by the molding; removing the auxiliary carrier; and producing individual surface-mountable semiconductor components by severing the molding.

Method for producing a surface-mountable semiconductor component

The invention relates to a method for producing an optical and a radiation-emitting component by a molding process, and to an optical and a radiation-emitting component having well-defined viscosity.

Method for producing an optical, radiation-emitting component and optical, radiation-emitting component

A process is specified for producing a radiation-emitting component comprising a housing body and a carrier for a radiation-emitting semiconductor body, in which the carrier is produced in an injection molding process from a molding compound containing a metal.

Radiation-emitting component provided with metallic injected-molded carrier

A radiation-emitting and/or radiation-receiving semiconductor component comprising a radiation-emitting and/or radiation-receiving semiconductor chip, a molded plastic part which is transparent to an electromagnetic radiation to be emitted and/or received by the semiconductor component and by which the semiconductor chip is at least partially overmolded, and external electrical leads that are electrically connected to electrical contact areas of the semiconductor chip. The molded plastic part is made of a reaction-curing silicone molding compound. A method of making such a semiconductor component is also specified.

Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof

A surface-mountable light-emitting diode light source is described, in which the leadframe-bends toward the rear side of the package that are required for surface mounting lie within a transparent plastic molded body. Also described is a method of producing a mixed-light, preferably white-light source on the basis of a UV- or blue-emitting semiconductor LED. The LED is mounted on a leadframe, a transparent plastics molding composition is mixed with a conversion substance and possibly further fillers to form a molding composition. The leadframe is encapsulated, preferably by the injection-molding process, with the molding composition in such a way that the LED is surrounded on its light-exiting sides by the molding composition.

Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source

A radiation-emitting surface-mountable component has a light-emitting diode chip mounted on a leadframe. A molding material encapsulates the leadframe and the light-emitting diode chip.

Surface-mountable radiation-emitting component

A radiation-emitting semiconductor component, comprising a semiconductor body which emits a primary light, a luminescent conversion element which emits fluorescent light, in which the luminescent conversion element comprises a suspension of a luminous substance in a matrix material, wherein the luminescent conversion element is in direct contact with a part of the surface of said semiconductor body, and wherein the fluorescent light emitted from said luminescent conversion element is approximately half the total emission of the light of the radiation-emitting semiconductor component.

Radiation emitting semiconductor component with luminescent conversion element

A plurality of light-emitting diode light sources of the same kind are produced simultaneously. Each light source includes a light-emitting diode chip and a luminescence conversion element, which converts the wavelength of at least part of an electromagnetic radiation emitted by the light-emitting diode chip. In a first process, a layer composite with a light-emitting diode layer sequence applied to a carrier substrate is provided. The wafer is provided with trenches and then inserted into a cavity of a mold. A molding compound, which contains a luminescence conversion material, is driven in, so that the trenches are at least partly filled with the molding compound. The mold is then removed and the light-emitting diode light sources are separated from the layer composite. In a second process, instead of the layer composite, a plurality of light-emitting diode chips which are applied to a common carrier in a regular arrangement are provided.

Process for the production of light-emitting diode light sources with a luminescence conversion element

The invention relates to a semiconductor component comprising surface metallization and having at least one semiconductor body () and a package base body () on whose surface conductor path structures () are formed by means of surface metallization. A subregion of the conductor path structure () constitutes the solder connections of the semiconductor component. The solder connections () are combined to form rows, the individual rows of solder connections being arranged at a very small, predetermined spacing from one another.

Semiconductor component comprising a surface metallization

The invention describes a radiation-emmitting semiconductor component with luminescence conversion element (), in the case of which the semiconductor body () is arranged in a recess in the basic body (). Within the recess, there is shaped around the semiconductor body a bowl-like region which contains the luminescence conversion element () and envelopes the semiconductor body (). The bowl-like region is formed as a depression within the recess or as an annular enclosure () on the base of the recess.

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Wuppertal, Germany

Harald Jäger