Osram Opto Semiconductors Gmbh

Shin-etsu Chemical Co., Ltd.

Osram Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Harald Jaeger

Michael Zitzlsperger

Joerg Sorg

Thomas Zeiler

Albert Schneider

Toshio Shiobara

Tsutomu Kashiwagi

Herbert Brunner

Ralph Wirth

Frank Jermann

Krister Bergenek

Stefan Lange

Stefan Groetsch

Andreas Biebersdorf

Ivar Tangring

Axel Kaltenbacher

Gertrud Kraeuter

Daniel Leisen

Stephan Preuss

Jens Eberhard

Christine Maier

An optoelectronic component may be produced by providing a temporary carrier, applying a functional film to the temporary carrier, arranging optoelectronic elements within openings of the functional film in such a way that the mounting sides are facing towards the temporary carrier. The optoelectronic elements are thicker than the functional film such that the elements protrude beyond the functional film in a direction away from the temporary carrier. The method may further include applying a potting compound laterally around the elements and covering the function film and curing the potting compound to form a potting. The method may further include cutting between the openings to create individual optoelectronic components.

Method for producing an optoelectronic device and optoelectronic device

A surface-mountable optoelectronic component has a radiation passage face, an optoelectronic semiconductor chip and a chip carrier. A cavity is formed in the chip carrier and the semiconductor chip is arranged in the cavity. A molding surrounds the chip carrier at least in places. The chip carrier extends completely through the molding in a vertical direction perpendicular to the radiation passage face.

Surface-mountable optoelectronic component and method for producing a surface-mountable optoelectronic component

An optoelectronic component including a connection carrier comprising a structured carrier strip in which interspaces are filled with an electrically insulating material and an optoelectronic semiconductor chip attached and electrically connected to a top portion of the connection carrier, wherein the electrically insulating material terminates substantially flush with the carrier strip in places or the carrier strip projects beyond the electrically insulating material, and the carrier strip is not covered by the electrically insulating material on the top portion and/or on a bottom portion of the connection carrier.

Optoelectronic component and method for producing an optoelectronic component

Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Optoelectronic component with inert gas atmosphere

An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the connection carrier, wherein the connection carrier configured with a silicone matrix with a fiber reinforcement, at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith, an annular potting body includes a soft silicone on the carrier top and in direct contact with the carrier top, but not in direct contact with the semiconductor chip, and a glass body comprising a glass sheet applied over the semiconductor chip and over sides of the potting body remote from the connection carrier, thereby forming a space between the semiconductor chip and the potting body.

UV- and heat-resistant optoelectronic semiconductor component

A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer to the radiation-emitting device and the separating regions; E) severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer in a first separating step; and F) partially severing the interlayer and severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.

Method for producing a plurality of radiation-emitting components and radiation-emitting component

An optoelectronic component includes a housing. At least one semiconductor chip is arranged in the housing. The semiconductor chip includes an active layer suitable for producing or detecting electromagnetic radiation. A casting compound at least partially surrounds the semiconductor chip. Reflective particles are embedded in the casting compound.

Optoelectronic component and method for producing an optoelectronic component and a compound structure

An optoelectronic component () is provided, having at least two connecters () for electrical contacting of the component (), a housing body (), in which the connecters () are embedded in places, a heat sink (), which is connected to at least one connecter (), wherein the housing body () is formed of a plastics material, the housing body () comprises an opening (), in which the heat sink () is freely accessible in places, at least one optoelectronic semiconductor chip () is arranged in the opening () on the heat sink (), and at least two of the connecters () each comprise a chip-end portion (), which faces the at least one optoelectronic semiconductor chip (), wherein the chip-end portions () of the at least two connecters () are arranged in a common plane.

Optoelectronic component, and method for the production of an optoelectronic component

A method is disclosed for the manufacture of an optoelectronic component. A substrate has a first primary face and a second primary face that lies opposite the first primary face. A semiconductor body that is capable of emitting electromagnetic radiation from a front side is attached to the first primary face of the substrate. A covering that is transparent to the radiation from the optoelectronic semiconductor body is applied to at least the front side of the semiconductor body. The covering is given the form of an optical element by using a closed cavity that is shaped with the contour of the optical element.

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Wuppertal, Germany

Harald Jaeger