Robert Boschgmbh

Harald Guenschel

Lothar Diehl

Roland Guenschel

Juergen Sindel

Hubert Benzel

Thomas Wahl

Ralf Schmidt

Henrik Schittenhelm

Gerhard Schneider

Detlef Heimann

Thomas Moser

Uwe Glanz

Thorsten Ochs

Stefan Zimmermann

Marcus Ahles

Sabine Roesch

Lutz Dorfmueller

Helmut Marx

Stefan Rodewald

Henrico Runge

Markus Siebert

Janine Riedrich-Moeller

Leonore Schwegler

Juergen Ruth

Christoph Peters

Andreas Haeffelin

Tobias Kuehnlein

Andreas Schaak

Holger Ross

Berthold Ficker

Jürgen Sindel

A packaging technology for MECS components, which allows the realization of extremely robust components which are resistant to high temperatures and media. Such a component includes at least one micro-electrochemical sensor (MECS) component having a diaphragm, which is developed in a layer construction on the substrate of the component and spans an opening in the substrate rear side, and a carrier for the mounting and electrical contacting of the MECS component on an application circuit board. The MECS component is bonded to the carrier in flip chip technology, so that a hermetically tight mechanical connection between the top surface of the MECS component and the carrier surface exists at least in one connection region, and an electric connection between the MECS component and the carrier exists in at least one contact area.

Component part having a MECS component on a mounting carrier

A semiconductor sensor includes a cavity; a fluid connection between the cavity and an inlet area; a pump diaphragm that bounds the cavity; and a measuring diaphragm that bounds the cavity. The fluid connection includes a diffusion channel having multiple openings in the inlet area or multiple diffusion channels having respectively an opening in the inlet area, and it is possible to close at least one of the openings using laser light in order to influence an effective length or an effective cross section of the fluid connection.

Semiconductor sensor for gas concentration

A method for manufacturing a sensor element is provided for detecting at least one property of a measuring gas in a measuring gas chamber, in particular for detecting a proportion of a gas component in the measuring gas or a temperature of the measuring gas. The method includes the following steps: providing at least one solid electrolyte which includes at least one functional element; applying, at least in sections, at least one first layer made of a ceramic material to the solid electrolyte, the first layer having a first porosity after the application; and applying, at least in sections, at least one second layer made of a ceramic material, the second layer having a second porosity after the application, and the first layer differing from the second layer with respect to at least one material property. Moreover, a sensor element which is manufacturable according to this method is provided.

Method for manufacturing a solid electrolyte sensor element for detecting at least one property of a measuring gas in a measuring gas chamber, containing two porous ceramic layers

A sensor element is provided for gas sensors, in particular to determine particles in gas mixtures, the sensor element including at least one electrochemical measuring element exposed to the gas mixture to be determined, and at least one temperature-measuring element integrated into the sensor element. The temperature-measuring element includes a resistor track, which has an electric resistance of less than 180 Ohm at 0&#xb0; C. The resistor track may thus be produced by thin-foil technology, such as screen printing, for example.

Sensor element for gas sensors and method for operating same

In the measurement of sensor elements in a wafer composite, whereby non-electric stimuli are to be applied to the sensor elements, a semiconductor wafer having a multitude of sensor elements, each sensor element having a voltage supply connection, a grounded connection, and at least one sensor signal output, is configured such that a bus system is integrated in the semiconductor wafer, to which bus system at least the grounded connections of the sensor elements are connected and via which a supply voltage may be applied to the sensor elements, and that each sensor element is equipped with at least one controllable switching element for selecting the sensor element, so that only a selected sensor element supplies a sensor signal to a diagnosis device.

Semiconductor wafer having a multitude of sensor elements and method for measuring sensor elements on a semiconductor wafer

A sensor for determining the concentration of particulates in gas mixtures is described, a soot sensor in particular, having a ceramic sensor body surrounded by a metallic housing and having a first and a second measuring electrode. In this instance, the first measuring electrode is connected to the metallic housing of the sensor or the metallic housing of the sensor is designed as the first measuring electrode. By additional electrodes on the ceramic body, the sensor is operable also as a lambda sensor.

Particulate sensor and method for operating a particulate sensor

A sensor element to determine the temperature or the oxygen concentration of an exhaust gas of an internal combustion engine includes a first solid electrolyte film, a second solid electrolyte film, and a diffusion barrier disposed in a layer plane between the first and the second solid electrolyte film. A gas-impermeable or at least largely gas-impermeable cover layer is provided locally on the diffusion barrier, so that in the regions in which the cover layer is provided on the diffusion barrier, diffusion of the measured gas into or out of the diffusion barrier is at least largely prevented. A corresponding method for manufacturing a sensor element includes ablating a diffusion barrier using a laser in order to adjust the diffusion resistance of the diffusion barrier. A cover layer that, after a sintering process, is gas-impermeable or at least largely gas-impermeable is applied onto a side of the diffusion barrier that faces toward a measured gas located outside the sensor element. The cover layer is ablated in order to adjust the diffusion resistance of the diffusion barrier.

Sensor element

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Gerach, Germany

Harald Guenschel