Other

Applied Materials, Inc.

Von Ardenne Anlagentechnik Gmbh

Von Ardenne Gmbh

Harald Gross

Carsten Deus

Erwin Zschieschang

Vladimir Goldenberg

Udo Willkommen

In an apparatus for thermal treatment of substrates, a gas discharge lamp runs in a simmer mode in standby operation. A constant power supply may be connected to the gas discharge lamp via a first switch. At least one charged capacitor may be connected to the gas discharge lamp via a second switch. A thermal treatment of the end side of a substrate with a duration of between 20 milliseconds and 500 milliseconds is provided in a manner governed by light absorption. This time window is advantageous for thermal treatment of coatings having a thickness of 2 to 200 micrometers, wherein the temperature of the rear side of the substrate can remain below that of the end side. The temperature on the end side can be significantly increased by the gas discharge lamp being connected to the capacitor via the second switch at the end of the time window.

Method and apparatus for the thermal treatment of a substrate

A method and a device for hermetically encapsulating components using at least one gas discharge lamp, an inorganic material that is transparent for light and a light-absorbing inorganic medium, are provided. With a suitable selection, inorganic materials or inorganic media guarantee a very low level of permeability for oxygen, water vapor and reactive gases in contrast to organic materials or organic media. The encapsulation occurs in a time period of less than one second. In addition, the average temperature of the component only increases slightly, such that even components with temperature-sensitive regions can be encapsulated.

Method and device for encapsulating components

A method for separating different types of material layers of a composite component that has at least one material layer that is transparent for visible light and at least one further material layer, is provided, wherein the light from an external source falls through the at least one transparent material layer into the at least one further material layer and there is at least partially absorbed. With the help of at least one gas discharge lamp, the light-absorbing material layer is heated in less than one second to separate material layers of the composite component. A device that can be used for this method comprises at least one separation chamber and therein at least one gas discharge lamp suitable for irradiation.

Method and device for separating different material layers of a composite component

A method for producing a low-emissivity layer system includes the steps of forming at least one low emissivity layer on at least one side of the substrate by deposition, and subsequent brief tempering of a deposited low emissivity layer by electromagnetic radiation, avoiding an immediate heating up of the substrate. A device for performing the method includes a flash lamp arrangement.

Method and device for producing a low-emissivity layer system

A flash lamp with a gas fill for suppressing self-starting includes an elongate discharge tube having two electrodes arranged in the discharge tube at opposite ends of the discharge tube. A starting electrode for applying a starting voltage is arranged outside the discharge tube, and the discharge tube has a length of at least 1000 mm and is filled with a gas fill. In order to suppress undesired self-starting, the discharge tube is filled with a gas mixture which contains at least one inert gas and at least one gas suppressing self-starting.

Flash lamp with gas fill for suppressing self-starting

A substrate treatment installation includes an installation chamber and a light source for the exposure of substrates to light. The light source is arranged in the interior of the substrate treatment installation and includes at least one discharge lamp arranged in a housing, which is permeable to light at least in sections and has a vacuum-tight cavity for accommodating the lamp, and also at least one reflector element arranged in spatial proximity to the at least one lamp and having an electrical connection.

Substrate treatment installation

In a method for coating substrates with materials to be vaporized in a vacuum coating system, the vaporization material is deposited on the substrate by double vaporization using an intermediate carrier. The intermediate carrier is continuously moved and cylindrical.

Method and device for coating substrates from the vapor phase

A process and a device for coating substrates with a stoichiometric gradient in an in-line coating system include at least two evaporation devices, each with an evaporator tube. The evaporator tubes are implemented so as to be tiltable independently of one another, whereby the transition area of the two vapor lobes can be adapted to the requirements of the gradient profile. Furthermore, the spacing of the evaporator tubes from the substrate and each other can be set.

Method and device for producing stoichiometry gradients and layer systems

We have developed a particular combination of elements and devices which enables the portability of a scanning electron microscope (SEM). In particular the combination enables a small size, typically less than about 50 liters, a manageable weight, typically less than about 15 kg, and a low power requirement, typically less than about 100 W, which permits operation using power supplied from a portable source such as a battery. Higher performance versions may exhibit increased volume in the range of about 150 liters, increased weight, in the range of 45 kg, and a power requirement in the range of 300 W. The higher performance version of the portable scanning electron microscope may be portable with the assistance of a dolly (rolling cart) or with the assistance of attached wheels and pulling appendage.

Light weight portable scanning electron microscope

We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.

Anodically bonded device structure

Disclosed herein are methods of fabricating three dimensional Micro-Electro-Mechanical-Systems (MEMS). This method involved stacking of silicon-containing components which are separated by spacers. The stacked components are precision aligned and then may be bonded, retained or fastened together to form a rigid structure. Spaces created between MEMS device components by the separations may be filled with an electrically isolating fluid such as a gas or vacuum. Also disclosed is a method of aligning components relative to each other and an alignment jig which may be used to align the components.

Method and apparatus used in fabrication of MEMS stacks

Portable scanning electron microscope

Disclosed herein are methods of preparing vertical electrical interconnects within multiple layers of substrates, where a portion of the substrate layers are glass and a portion of the substrate layers are single-crystal silicon. The methods taught herein can be used to prepare basic &ldquo;units&rdquo; which can be stacked and anodically bonded together to form electrically connected, multi-unit structures. The methods of the invention are particularly advantageous in the fabrication of microcolumns, and especially an array of microcolumns of the kind used in electron optics, including electron microscopes and lithography apparatus.

Micromachined structures including glass vias with internal conductive layers anodically bonded to silicon-containing substrates

Disclosed is a method of forming a thick silicon oxide layer upon or internal to a silicon structure. The method is particularly useful in creating isolation regions within a silicon-containing structure, where such isolation regions can withstand high voltages. The electrically isolating thick silicon oxide layer or isolation regions can be shaped, machined, or etched to provide feedthroughs for vertical or horizontal interconnects. The feedthroughs may be coated with metal or filled with metal to provide the interconnect.

Growing community of inventors

Fremont, CA, United States of America

Harald Gross