Ams Ag

Ams International Ag

Sciosense B.v.

Technische Universitat Graz

Harald Etschmaier

Thomas Bodner

Bernhard Stering

Franz Schrank

Rainer Minixhofer

Georg Roehrer

Anderson Singulani

Gregor Toschkoff

Martin Schrems

David Mehrl

Alexander Bergmann

Klaus Schmidegg

Nobuyoshi Hiramatsu

Olesia Synooka

Sonja Koenig

Arnold Umali

Guenter Aflenzer

A method for fabricating a plurality of Time-of-Flight sensor devices () comprises a step of providing a wafer () including a plurality of wafer portions () for a respective one of the Time-of-Flight sensor devices (), wherein each of the wafer portions () includes a first light detecting area () and a second light detecting area () and a respective light emitter device (). The respective light emitter device () and the respective first light detecting area () is encapsulated by a first volume () of a light transparent material (), and the respective second light detecting area () is encapsulated by a second volume () of the light transparent material (). Before singulation of the devices (), an opaque material () is placed on the wafer portions () in a space () between the respective first and second volume () of the light transparent material ().

Method for fabricating a plurality of time-of-flight sensor devices

A particulate matter sensor system for sensing particulate matter in a fluid includes a substrate and a cover disposed on the substrate. The cover defines at least a portion of a flow path through the microfluidic system. The sensor system includes a particulate matter sensor disposed in an interior space between the cover and the substrate. The particulate matter sensor includes an integrated sensor device electrically connected to the substrate. The flow path is defined through the particulate matter sensor. The sensor system includes a fluid circulation device disposed in the interior space between the cover and the substrate and configured to cause fluid to flow along the flow path through the microfluidic system.

Integrated particulate matter sensor systems

An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.

Optical sensor arrangement and method for manufacturing an optical sensor arrangement

The optical sensor package comprises an optical sensor device with a sensor element arranged inside a housing comprising a cap. A diffuser is arranged in an aperture of the cap opposite the sensor element and prolongs the cap in the aperture or closes the aperture. The method comprises forming a cap with an aperture, arranging a diffusing material in the aperture, thus forming a diffuser, and after forming the diffuser, arranging an optical sensor device with a sensor element inside a housing that includes the cap, such that the sensor element is opposite the diffuser.

Optical sensor package and method of producing same

A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.

Method for manufacturing optical sensor arrangements and housing for an optical sensor

An optical package is proposed comprising a carrier, an optoelectronic component, an aspheric lens, and a reflective layer. The carrier comprises electrical interconnections and the optoelectric component is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component is mounted on the carrier or integrated into the carrier and electrically connected to the electric interconnections. The aspheric lens has an upper surface, a lateral surface, and a bottom surface and the bottom surface is arranged on or near the optoelectric component. The aspheric lens comprises a material which is at least transparent in the specified wavelength range. The reflective layer comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface of the aspheric lens, and wherein the reflective material is at least partly reflective in the specified wavelength range.

Optical package and method of producing an optical package

The integrated smoke detection device comprises a carrier (), a light source () arranged on or above the carrier, a light receiver () arranged on or above the carrier at a distance from the light source, and a polarizing member () arranged on or above the carrier, the light source emitting radiation (a, b) into the polarizing member. The polarizing member is configured to have a boundary surface () that linearly polarizes a reflected portion (d) of the radiation emitted by the light source, and an exit surface () that allows the reflected portion (d) to exit the polarizing member.

Integrated smoke detection device

A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.

Method of producing an optical sensor at wafer-level and optical sensor

A sensor assembly for being mounted on a circuit board comprises an interposer with at least one opening extending between a first and a second main surface of the interposer. The interposer comprises at least two stress decoupling elements, each comprising a flexible structure formed by a respective portion of the interposer being partially enclosed by one of the at least one opening. A sensor die is connected to the flexible structures on the first main surface. At least two board connection elements are arranged on the first main surface and adapted for connecting the assembly to the circuit board.

Sensor assembly and arrangement and method for manufacturing a sensor assembly

A package for an optical sensor, comprises an optically opaque enclosure for forming a cavity when mounted onto a substrate and an optical element based on an optically translucent polymer. An aperture in the enclosure is designed to attach the optical element to the enclosure.

Package for an optical sensor, optical sensor arrangement and method of producing a package for an optical sensor

The semiconductor device comprises a semiconductor substrate () with a main surface () and a further main surface () opposite the main surface, a TSV () penetrating the substrate from the main surface to the further main surface, a metallization () of the TSV, an under-bump metallization () and a bump contact () at least partially covering the TSV at the further main surface. The TSV () comprises a cavity (), which may be filled with a gas or liquid. An opening (') of the cavity is provided to expose the cavity to the environment.

Semiconductor device with a bump contact on a TSV comprising a cavity and method of producing such a semiconductor device

An integrated current sensor system has a printed circuit board with a magnetic field sensor with a sensor interface. The printed circuit board has a first side on which, isolated from the printed circuit board, a first current conductor is arranged with a longitudinal edge of a portion of the first current conductor being proximate to a sensitive area of sensor. The circuit board has a second side on which a second current conductor is, isolated from the printed circuit board, arranged, wherein a longitudinal edge of a portion of the second current conductor is arranged proximate to the sensitive area. The first and the second current conductor are electrically connected with at least one conductive via.

Integrated current sensor system and method for producing an integrated current sensor system

The semiconductor device comprises a semiconductor substrate (), a photosensor () integrated in the substrate () at a main surface (), an emitter () of radiation mounted above the main surface (), and a cover (), which is at least partially transmissive for the radiation, arranged above the main surface (). The cover () comprises a cavity (), and the emitter () is arranged in the cavity (). A radiation barrier () can be provided on a lateral surface of the cavity () to inhibit cross-talk between the emitter () and the photosensor ().

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Graz, Austria

Harald Etschmaier