Forschungszentrum Julich Gmbh

Harald D Muller

Jürgen Schneider

Hans Luth

Ralf Strumpler

An optoelectronic device, e.g. for integrated circuits, has an Si, II-VI or III/V semiconductor layer and an LaF.sub.3 or La.sub.1-x X.sub.x F.sub.3 insulating layer which is doped with Nd or Er to generate an optical signal whose wavelength is determined by the 4f ions used. The insulating layer can be grown epitaxially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insulating layer has the same valence as the metal for which it is substituted.

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Hinterzarten, Germany

Harald D Muller