Hitachi Energy Ltd

Abb Schweiz Ag

Hitachi Energy Switzerland Ag

Abb Power Grids Switzerland Ag

Harald Beyer

Dominik Truessel

Samuel Hartmann

Dominik Trüssel

Lluis Santolaria

David Guillon

Milad Maleki

Fabian Fischer

Roman Ehrbar

Robert Gade

A power semiconductor component with power semiconductor modules connected to a cooling structure, and a cooling chamber having an inlet and outlet port, and adapted for a flow direction of a coolant substance from the inlet port to the outlet port, each of the cooling structures provided within the cooling chamber consecutively in the flow direction forming a flow resistance region in the cooling chamber, the cooling chamber comprises a bypass region connected in parallel to at least one of the flow resistance regions being closer to the inlet port, and is adapted for a flow rate of the at least one flow resistance region, which is connected in parallel to the bypass region, closer to the inlet port being smaller than a flow rate of one of the at least two flow resistance regions closer to the outlet port.

Power semiconductor component

In one embodiment, a pre-product is configured for an electronic device intended to be loaded with a maximum current of at least 10 A, and comprises: an electronic component, a plurality of power terminals for external electrical contacting the electronic device, and a slide rail at an end of the at least one assigned power terminal remote from the electronic component. The power terminals are electrically connected to the electronic component and extend in a direction away from the electronic component. The slide rail is integrated in a metallic first leadframe together with at least one of the power terminals. A weight of the pre-product is at least 0.1 kg.

Pre-product, method and electronic device

A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.

Metal substrate structure for a semiconductor power module

A clamping element () is specified configured to be pressed to a baseplate () of at least one power semiconductor module () comprising a mold (), comprising —at least one contact area () being configured to be in direct contact to at least one clamping area () of the baseplate () being free of the mold (), and —at least one recess () provided in the baseplate, wherein —the recess () and the contact area () are configured to face the baseplate. Further, a method for producing a power semiconductor device is specified.

Clamping element and method for producing a power semiconductor device

A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.

Power semiconductor module with baseplate and heat dissipating element

A power semiconductor module includes a housing accommodating a power circuit with at least one power semiconductor chip, the housing providing at least two power terminals; a printed circuit board mounted to the housing and electrically connected to the power circuit for distributing auxiliary signals; and at least one auxiliary terminal mounted to the printed circuit board with a press-fit connection provided by a body of the auxiliary terminal.

Power semiconductor module

A power semiconductor module, including a housing and a substrate having at least one conductive path is located, at least one power semiconductor device arranged on said conductive path at least one contact, a self-sustaining system for detecting a physical parameter or a chemical substance, a device for wireless transmitting data provided by the sensor, and an energy source. The sensor detects at least one of current, voltage magnetic fields, mechanical stress, and humidity. The power semiconductor module may be part of an electronic device.

Growing community of inventors

Lenzburg, Switzerland

Harald Beyer