Asm IP Holding B.v.

Harald Benjamin Profijt

David Kohen

Andrew Kretzschmar

A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (SiGe) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (SiGe) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (SiGe) seed layer are also disclosed.

Methods for forming a semiconductor structure and related semiconductor structures

A method for depositing a germanium tin (GeSn) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (GeSn) semiconductor on the surface of the substrate, and exposing the germanium tin (GeSn) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (GeSn) semiconductor formed by the methods of the disclosure are also provided.

Growing community of inventors

Veldhoven, Netherlands

Harald Benjamin Profijt