Sony Corporation

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Sony Group Corporation

Haowei Wang

Qimei Cui

Xiaofeng Tao

Bingshan Hu

Tao Cui

Na Li

Song Wang

Huiling Zuo

Yuxuan Xie

Wenhai Mei

Zhenqi Zhang

Aidi Zhang

Xiaoyuan Zhang

Xiang Sean Zhou

Jiahui Liu

Disclosed are a quantum dot device, a display apparatus, and a manufacturing method for a quantum dot device. The quantum dot device includes: a substrate assembly; a first fixing layer, the first fixing layer being located on one side of the substrate assembly and having silane coupling agents with multi coordinate bonds, and first connection structures being provided between the first fixing layer and the substrate assembly; a quantum dot film layer, the quantum dot film layer being located on the side of the first fixing layer away from the substrate assembly and having a plurality of pattern portions, the pattern portions having quantum dots, and second connection structures being provided between the pattern portion and the first fixing layer.

Quantum dot device, display apparatus, and manufacturing method for quantum dot device

A method for manufacturing display panel including: forming pixel defining layer on one side of base substrate; forming quantum dot layer, including sequentially forming first quantum dot pattern of at least two quantum dot patterns, forming first quantum dot pattern of one quantum dot pattern including forming quantum dot film capable of emitting light with corresponding colors, quantum dot film including quantum dot body and cross-linkable ligand; performing local cross-linking process on quantum dot film; performing developing process on quantum dot film subjected to local crosslinking process to form first quantum dot pattern in pixel accommodating hole corresponding to corresponding color; after forming first quantum dot pattern of quantum dot patterns, the method includes performing fluorescence property quenching process to quench fluorescence of quantum dot body in quantum dot on surface of first quantum dot pattern and not subjected to crosslinking process. Also provided is display panel and display device.

Display panel, manufacturing method thereof and display device

A light-emitting device and a manufacturing method therefor, and a display device are disclosed. The light-emitting device includes a plurality of pixel units. Each pixel unit includes at least n sub-pixels capable of emitting light of n different colors. Each sub-pixel includes: a first electrode and a second electrode arranged oppositely; a light-emitting layer located between the first electrode and the second electrode, in at least one pixel unit, the light-emitting layer of the at least one sub-pixel includes a host quantum dot and at least one residual quantum dot emitting light of color different from the host quantum dot; and a color filter layer located on the side of the first electrode or the second electrode away from the light-emitting layer. The color filter layer is configured to pass through light emitted by the host quantum dot, and prevent light emitted by the residual quantum dot from passing through.

Light-emitting device and manufacturing method therefor, and display device

The present disclosure provides a hole transport material, a quantum dot light-emitting device and a manufacturing method thereof and a display apparatus. A surface of a quantum dot is modified with a ligand capable of being cross-linked with a modifying group of the hole transport material, that is, a cross-linking group in the ligand, so that when the quantum dot light-emitting device is manufactured, the cross-linking group of the quantum dot material is cross-linked with the modifying group of the hole transport material under a set external stimulus, so that the coupling degree between a light-emitting layer and a hole transport layer is increased and an interface structure between the light-emitting layer and the hole transport layer is weakened, thus facilitating carrier transmission. Under the condition of not sacrificing the transmission rate of electrons, hole injection is increased to the greatest extent, so as to regulate the injection balance of carriers, improve the carrier recombination rate of the quantum dot light-emitting device, and further improve the luminous efficiency and other device performances of the quantum dot light-emitting device. Moreover, the increase of hole injection will reduce the aggregation of carriers at an interface, thereby improving the stability of the device.

Hole transport material, quantum dot light-emitting device and manufacturing method thereof, and display apparatus

Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Preparation methods of quantum dot light emitting device and quantum dot display panel using stacked sacrificial layer and photoresist layer

The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Ligand, ligand quantum dot, quantum dot layer and method for patterning the same

Disclosed are a quantum dot material, a method for patterning a quantum dot film and a quantum dot light emitting device. when preparing a patterned quantum dot film, firstly, a quantum dot film is made by using the quantum dot material with the photolysis group, and a corresponding region of the quantum dot film is irradiated with ultraviolet light under the shielding of a mask template, so that the photolysis group in the corresponding region is photolyzed into the polarity change group, thereby changing the solubility of the quantum dot material in the corresponding region; and subsequently, the quantum dot film is cleaned by using a solvent which can dissolve the quantum dot material with the photolysis group, the quantum dot material in non-irradiated regions is dissolved and removed, and the quantum dot material in the corresponding region is retained to form a pattern of the quantum dot film.

Ligand modified quantum dot material and patterning thereof, and quantum dot material for light emitting and display devices

Disclosed are an electronic apparatus, an information processing device, and an information processing method. According to one embodiment, an electronic device used for a base station side comprises a processing circuit. The processing circuit is configured to: perform channel detection for a target channel; broadcast, to a user equipment, a resource indication used for uplink transmission based on a result of the channel detection; and receive uplink transmission performed by the user equipment based on the resource indication.

Electronic apparatus, information processing device, and information processing method

Disclosed are an electronic device in a wireless communication system, and a wireless communication method. The wireless communication system comprises multiple unlicensed carriers. The electronic device comprises: one or more processing circuits configured to: configure each of a plurality of unlicensed carriers to be a primary channel or a secondary channel, so as to obtain at least two primary channels and at least one secondary channel; perform a first channel detection process over each of the primary channels to detect whether each of the primary channels is idle, and perform a second channel detection process over each of the secondary channels to detect whether each of the secondary channels is idle; and perform downlink data transmission over the primary channel determined to be idle by means of the channel detection or over the primary and secondary channels determined to be idle by means of the channel detection. By utilizing the electronic device and the wireless communication method, the probability of access to an unlicensed carrier is improved.

Electronic device in wireless communication system and wireless communication method with multiple channel access determination

Disclosed are a wireless communication method and a wireless communication device. The wireless communication device comprises a processing circuit, wherein the processing circuit is configured to: detect broadcast information on a specific subchannel in an unlicensed frequency band; and broadcast time information on the specific subchannel when the broadcast information cannot be successfully detected, wherein the time the occupation of the specific subchannel by the wireless communication device ends can be determined according to the time information.

Wireless communication method and wireless communication device

The present disclosure relates to an electronic apparatus, a wireless communication device, and a wireless communication method. According to an embodiment, the electronic device for a base station side comprises a processing circuit. The processing circuit is configured to: perform control to perform, on a beam corresponding to a user equipment, channel detection on a target channel, the channel detection being based on a specific beam direction; and determine the access to the target channel according the channel detection result.

Electronic apparatus, wireless communication device, and wireless communication method

A wireless communication system, an apparatus, and a method in a wireless communication system. The apparatus includes a processing circuit. The processing circuit is configured to: detect whether a pre-set power margin reporting trigger event is satisfied; and trigger, if the pre-set power margin reporting trigger event is satisfied, reporting of a power margin of a user equipment to a base station, wherein the pre-set power margin reporting trigger event includes at least one of the following events: a first event of having detected an idle channel on an unlicensed band; and a second event of having received uplink scheduling licensed signalling from the base station. A power margin in an LAA system can be effectively reported.

Wireless communication system, and apparatus and method in wireless communication system

Electronic device in wireless communication system and wireless communication method

A wireless communication device and a wireless communication method. The wireless communication device for use on a base station side includes one or more processors. The processor is configured to determine start time and end time of data transmission on one or more auxiliary carriers on an unlicensed frequency band. The processor is further configured to control to send indication information about the start time and the end time to other base stations.

Growing community of inventors

Beijing, China

Haowei Wang