Globalfoundries Inc.

Haoran Shi

Haiting Wang

Seung Yeon Kim

Wei Hua Tong

Tien-Ying Luo

Yan Ping Shen

Feng Zhou

Min-Hwa Chi

Jin Ping Liu

Jun Lian

Yong Meng Lee

Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Conformal nitridation of one or more fin-type transistor layers

A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.

Forming a gate by depositing a thin barrier layer on a titanium nitride cap

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Saratoga Springs, NY, United States of America

Haoran Shi