Royole Corporation

Haojun Luo

Zihong Liu

Ze Yuan

Peng Wei

Xiaojun Yu

Jigang Zhao

A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.

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Fremont, CA, United States of America

Haojun Luo