Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Nanjing Company, Limited

Microsoft Technology Licensing, LLC

Haohua Zhou

Tze-Chiang Huang

Mei Hsu Wong

Sandeep Kumar Goel

Yun-Han Lee

Mei Hsu

Alan S Roth

Eric Soenen

Ying-Chih Hsu

Xiaoling Xu

Paul Ranucci

A device is disclosed. The device includes a first memory circuit and a processing circuit. The first memory circuit stores identifications of the device that are used to generate first hash data through a hash algorithm. The processing circuit is coupled to the first memory circuit and selects at least one bit of each of the identifications in sequence to form a bit sequence, generates second hash data through the hash algorithm based on the bit sequence and authenticates the device according to a comparison between the first hash data and the second hash data.

Device with self-authentication

A method includes: extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC; determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model; extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage; refining the first design data of the IVR to generate a second design data of the IVR; determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model.

System on chip (SOC) current profile model for integrated voltage regulator (IVR) co-design

A voltage regulator includes a control circuit configured to output a plurality of enable signals, and a power stage including a plurality of phase circuits. Each phase circuit of the plurality of phase circuits includes a node, an inductor coupled between the node and an output node of the voltage regulator, a plurality of p-type transistors coupled between the node and a power supply node of the voltage regulator, and a plurality of n-type transistors coupled between the node and a reference node of the voltage regulator. Each phase circuit of the plurality of phase circuits is configured to, responsive to the plurality of enable signals, selectively couple the node to the power supply node through a first subset or all of the plurality of p-type transistors, and selectively couple the node to the reference node through a second subset or all of the plurality of n-type transistors.

Trim-based voltage regulator circuit and method

Homogeneous chiplets configurable both as a two-dimensional system or a three-dimensional system are described. An example chiplet system has a first homogeneous chiplet (HC) including a first integrated circuit (IC) die having a first logic block and a first memory that are interconnected via a first path for transfer of data signals between the first logic block and the first memory block. A second HC including a second IC die having a second logic block and a second memory block, interconnected via a second path for transfer of data signals between the second logic block and the second memory block, is stacked vertically on top of the first HC to provide a third path for transfer of data signals between the first logic block and the second memory block and a fourth path for transfer of data signals between the second logic block and the first memory block.

Homogeneous chiplets configurable as a two-dimensional system or a three-dimensional system

A plurality of semiconductor devices are arranged in a stack. Individual semiconductor devices within the stack are selected by an identity signal sent into the stack. The signal is compared within each stack to a unique stack identifier stored within each of the semiconductor devices and, when the signal is the same as the unique stack identifier, the semiconductor device is selected while, when the signal is not the same as the unique stack identifier, the semiconductor device remains within the default bypass mode.

Semiconductor device and method of manufacture

Systems, devices, and methods are described herein for measuring an impedance of a DUT using an integrated impedance measurement device. A system includes a plurality of measurement circuits, a FFT processor, and a controller. The measurement circuits are coupled to the DUTs. Each measurement circuit is configured to generate a clock signal for a respective DUT, detect a voltage of the respective DUT, and generate first voltage related data using the clock signal and the voltage. The FFT processor is coupled to the measurement circuits. The FFT processor is configured to convert the first voltage related data into second voltage related data using a fast Fourier transform for each measurement circuit. The controller is coupled to the measurement circuits and the FFT processor. The controller is configured to calculate an impedance using the second voltage related data for each measurement circuit and output the impedance to each DUT.

Integrated impedance measurement device and impedance measurement method thereof

A semiconductor device includes an analog voltage regulator and an integrated circuit module. The analog voltage regulator generates a regulated output voltage. The integrated circuit module generates an analog sense voltage based on the regulated output voltage and includes integrated circuit dies, a first sensor, second sensors, and a digital voltage offset controller (DVOC). The first sensor generates a digital reference voltage based on an analog reference voltage. The second voltage sensors detect voltages at predetermined locations on the integrated circuit dies. The DVOC generates a digital offset voltage substantially equal to the difference between the digital reference voltage and the voltage detected by a selected one of the second voltage sensors. The regulated output voltage is based on an unregulated input voltage, the analog sense voltage, and the digital offset voltage.

Semiconductor device including a voltage regulator and an integrated circuit module

A device includes a first memory circuit and a processing circuit. The first memory circuit is configured to store first hash data. The processing circuit is coupled to the first memory circuit. The processing circuit is configured to: at least based on a volume of the device, define a size of a distinguishable identification (ID) and a size of second hash data; based on a combination of at least one bit of each of the distinguishable ID and IDs of the device, generate the second hash data; and compare the first hash data with the second hash data, in order to identify whether the device is tampered. A method is also discloses herein.

A semiconductor structure includes a first substrate. A first die and a second die are disposed over the first substrate and are adjacent to one another. A plurality of first conductive bumps are disposed between the first substrate and the first die and between the first substrate and the second die. A second substrate is disposed below the first substrate. A plurality of second conductive bumps is disposed between the first substrate and the second substrate. An in-package voltage regulator (PVR) chip is disposed over the second substrate. A molding material is disposed over the first substrate and surrounds the first die, the second die, the plurality of first conductive bumps, the plurality of second conductive bumps, and the PVR chip.

Power delivery for multi-chip-package using in-package voltage regulator

A voltage regulator includes an output node, a control circuit, and a power stage. The control circuit is configured to receive a power state signal from a load circuit coupled to the output node, and output a control signal based on the power state signal. The power stage includes a plurality of phase circuits coupled to the output node and is configured to enable a phase circuit of the plurality of phase circuits responsive to the control signal.

Power state-based voltage regulator circuit and method

A device includes a first memory circuit, a second memory circuit and a processing circuit. The memory circuit is configured to store a distinguishable identification (ID). The second memory circuit is configured to store first hash data, wherein the first hash data is generated according to the distinguishable ID. The processing circuit is configured to generate second hash data according to the distinguishable ID when the device is powered on, and to compare the first hash data and the second hash data to determine whether the second hash data matches the first hash data.

A System On Chip (SOC) current profile model for Integrated Voltage Regulator (IVR) co-design may be provided. A first current profile model may be extracted corresponding to an SOC at a first design stage of the SOC. Then it may be determined that an IVR and the SOC pass a first co-simulation based on the extracted first current profile model. Next, a second current profile model may be extracted corresponding to the SOC at a second design stage of the SOC. Then it may be determined that the IVR and the SOC pass a second co-simulation based on the extracted second current profile model. A third current profile model may be extracted corresponding to the SOC at a third design stage of the SOC. Then it may be determined that the IVR and the SOC pass a third co-simulation based on the extracted third current profile model.

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Fremont, CA, United States of America

Haohua Zhou