Tosoh Smd, Inc.

Marvell International Limited

Ebay, Incorporated

Sharp Laboratories of America, Inc

Sharp Laboratory of America, Inc.

Hao Zhang

Apostolos T Voutsas

Pooran Chandra Joshi

Ken Yeung

Jiandong Huang

Mingkuan Liu

Nelson Xu

Xianjing Liu

Alan Qing Lu

Raja Banerjea

Josselin De La Broise

Harish Ramamurthy

Ann Bolcavage

Jeff Hart

Qing Lu

Ashutosh Mishra

Aimin Guo

Yiqing Shen

In some aspects, a query for one or more items is received. The query includes a plurality of terms. It is determined that a search result candidate is semantically similar to the query based at least in part on a distance between a first vector that represents the query and a second vector that represents the search result candidate in semantic space. The first vector and the second vector can each correspond to a single vector of binary values. Based at least in part on the determining that the search result candidate is semantically similar to the query, the search result candidate may be caused to be displayed. The search result candidate can include at least a first term that has a same meaning as at least a second term of the query, and the first term and the second term may have a different structure.

Binary coding for improved semantic search

Embodiments of the present disclosure relate generally to semantic indexing to improve search results of a large corpus. Some embodiments identify one or more closest matches between (i) a search semantic vector that corresponds to a search query, the search semantic vector based on a first machine-learned model that projects the search query into a semantic vector space, and (ii) a plurality of publication vectors corresponding to respective publications in the publication corpus, the plurality of publication vectors based on a second machine-learned model that projects the plurality of publication vectors into the semantic vector space.

Semantic forward search indexing of publication corpus

Embodiments of the present disclosure relate generally to index trimming to improve search results of a large corpus. Some embodiments, prior to receiving, from a user device, a search query of one or more keywords searching for a relevant set of publications in a publication corpus, trim candidate publications from a plurality of candidate publications to generate a trimmed plurality of candidate publications.

Search index trimming

Embodiments of the present disclosure relate generally to semantic indexing to improve search results of a large corpus. Some embodiments, with at least one of the keywords of the search query encoded by a semantic vector in a semantic vector space, identify a plurality of candidate publications in the publication corpus, the plurality of candidate publications encoded by a cluster of a plurality of semantic vectors in the semantic vector space, the identifying based on proximity in the semantic vector space between the at least one of the keywords of the search query and keywords in the plurality of candidate publications, the proximity based on a first machine-learned model that projects the at least one keyword in the search query and the keywords in the plurality of candidate publications into the semantic vector space.

Semantic reverse search indexing of publication corpus

A network device including first, second and third transceiver modules, which transmit or receive first, second and third data signals. A control module generates a mask signal based on a parameter of the first, second or third transceiver modules. The mask signal includes a direction bit and a first channel that identifies a first frequency. The direction bit indicates a range of frequencies. Transmission on the first frequency and some of the range of frequencies causes desensitization of the second data signal. A hopping module, based on a clock signal, selects a second channel for the third data signal. An output module, based on the mask signal and the second channel, generates an overlap signal indicating whether potential desensitization of the first or third data signal exists. An arbitration module, based on the overlap signal, provides the first or third transceiver module access to a first or second switch module.

Method and apparatus for providing a selected one of coexisting transceiver modules access to switch modules

Systems and techniques relating to wireless communications are described. A described technique includes performing, at a wireless communication device, an arbitration among multiple different wireless radio technologies, which collectively use two or more radio resources of the wireless communication device, to produce an arbitration result; and operating the two or more radio resources in accordance with the arbitration result. Performing the arbitration can include performing a first level arbitration between a request associated with a first technology of the multiple different wireless radio technologies and a request associated with a second technology of the multiple different wireless radio technologies to produce a first level result; and performing a second level arbitration to produce a second level result when indicated by the first level result. The arbitration result can be based on the first level result and the second level result, if any.

Multi-level arbitration for wireless device having multiple radio resources

A coexistence system including first and second transceiver modules and an arbitration module. The first transceiver module generates a first request signal and operates according to a first wireless communication standard. The first request signal requests transmission or reception for the first transceiver module. The second transceiver module generates a second request signal and an overlap signal and operates according to a second wireless communication standard. The second request signal requests permission for the second transceiver module to transmit or receive. The overlap signal indicates whether desensitization is expected of a frequency of the first transceiver module or a frequency of the second transceiver module. The arbitration module (i) based on the overlap signal, arbitrates the first and second request signals, and (ii) based on the arbitration of the first and second request signals, selectively connect antennas to the first and second transceiver modules in one multiple configurations.

Method and apparatus for coexistence transceiver system

Systems, methods, and other embodiments associated with performing arbitration among a plurality of driver circuits in a communication device are described. According to one embodiment, an apparatus includes a first source configured to transmit first packets and a second source configured to transmit second packets. The arbiter logic is configured to input a thermal management mode that is selected based, at least in part, on a thermal consequence of simultaneous transmission of packets from the first source and the second source. The arbiter logic is configured to select either i) the first packets, ii) the second packets, or iii) both the first packets and the second packets for transmission based, at least in part, on the thermal management mode input by the arbiter logic.

Method and apparatus for performing arbitration among a plurality of driver circuits in a communication device

A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.

Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device

A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.

Method of forming silicon nanocrystal embedded silicon oxide electroluminescence device with a mid-bandgap transition layer

A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip.

Optical waveguide amplifier using high quantum efficiency silicon nanocrystal embedded silicon oxide

A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, SiNx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film

An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Erions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

Erbium-doped silicon nanocrystalline embedded silicon oxide waveguide

The present invention relates to producing cobalt having a low oxygen and a low oxide inclusion content for use as a sputter target thereby reducing the arcing and metal defects during sputtering commonly associated with high-oxygen cobalt sputter targets. Notably, the method for reducing the oxygen content and the oxide inclusion content in cobalt are separate processes which may be combined in successive order to procuce a low-oxygen cobalt sputter target having a low oxide inclusion content. The reduction in oxygen content preferably is performed prior to reducing the oxide inclusion content. Accordingly, the artisan will appreciate that one process can be performed without the other depending upon whether a reduction in oxygen or oxide inclusions is preferred in a desired cobalt sputter target.

Method for reducing the oxygen and oxide content in cobalt to produce cobalt sputtering targets

A sputter target assembly including a high purity copper sputter target diffusion bonded to a backing plate, preferably composed of either aluminum, aluminum alloy, aluminum matrix composite materials, copper, or copper alloy, and a Ni-alloy interlayer, preferably composed of Ni&mdash;V, Ni&mdash;Ti, Ni&mdash;Cr, or Ni&mdash;Si, located between and joining the target and backing plate, and a method for making the assembly. The method of making involves depositing (e.g., electroplating, sputtering, plasma spraying) the interlayer on a mating surface of either the sputter target or backing plate and pressing, such as hot isostatically pressing, the sputter target and backing plate together along mating surfaces so as to form a diffusion bonded sputter target assembly.

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San Jose, CA, United States of America

Hao Zhang