United Microelectronics Corp.

Hao-Yeh Liu

Yu-Ping Wang

Mon-Sen Lin

Ching-Hsiang Chiu

Yu-Hsiang Lin

Chien-Ming Lai

Chun-Tsen Lu

Ya-Huei Tsai

Yu-Ting Tseng

Chia-Wei Liu

Jia-Feng Fang

A method for forming a semiconductor structure is provided. Multiple fins extending along a first direction are formed in a semiconductor substrate. The multiple fins includes a group of active fins, a pair of protection fins sandwiching about the group the active fins, and at least one dummy fin around the pair of protection fins. A fin cut process is performed to remove the at least one dummy fin around the pair of protection fins. After performing the fin cut process, trench isolation structures are formed within the trenches between the multiple fins. The trench isolation structures are subjected to an anneal process. After annealing the trench isolation structures, the pair of protection fins is removed.

Method for forming a semiconductor structure

A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first transistor, a second transistor and a third transistor all disposed on the substrate. The first transistor includes a first channel, and a first barrier layer and a first work function layer stacked with each other on the first channel. The second transistor includes a second channel, and a second barrier layer and a second work function layer stacked with each other. The third transistor includes a third channel and a third barrier layer and a third work function layer stacked with each other on the third channel, wherein the first barrier layer, the second barrier layer and the third barrier layer have different nitrogen ratio. The first, the second and the third transistors have different threshold voltages, respectively.

Semiconductor device and method of forming the same

A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal dielectric layer thereon, removing the dummy gate to form a gate trench on the fin structure, blanketly forming a stress film on the substrate to cover a surface of the gate trench, performing a thermal annealing process, removing the stress film, and forming a metal gate is in the gate trench.

Method of fabricating fin field effect transistor

Growing community of inventors

Kaohsiung, Taiwan

Hao-Yeh Liu