Tsinghua University

Au Optronics Corporation

Hao-Wu Lin

Chien-Yu Chen

Sheng-Yi Hsiao

Shih-Feng Hsu

Li-Wei Chen

Ho-Hsiu Chou

Yu-Cheng Shiau

Chang-Wen Chen

Chih-Li Chang

Wei-Kai Cheng

Cheng-Yueh Chen

Tsung-Kai Su

Wei-Chun Wang

Tse-Wei Chen

Chih-Ting Hsu

Hao-Wei Kang

Wei-Hung Lee

Lin Yang

A lead-free metallic halide memristor is disclosed. The lead-free metallic halide memristor comprises a first electrode layer, an active layer and a second electrode layer, of which the active layer is made of a metallic halide material. Experimental data have proved that the lead-free metallic halide memristor possesses synaptic plasticity because of showing characteristics of short-term potentiation, short-term depression, long-term potentiation, long-term depression during the experiments. Therefore, the lead-free metallic halide memristor has significant potential for being used as an artificial synaptic element so as to be further applied in the manufacture of a reservoir computing chip. Moreover, experimental data have also proved that the lead-free metallic halide memristor also shows the characteristics of multi-level resistive switching, whereupon the lead-free metallic halide memristor can be further used as analog non-volatile memory so as to be further applied in the manufacture of a neuromorphic computing chip.

Lead-free metallic halide memristor and electronic element comprising the same

A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film. Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Halide material and optical unit and optoelectronic device having the same

Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.

Halide semiconductor memristor and neuromorphic device

Differing from conventional technology utilizing double-layer electron transport layer (ETL) to improving power conversion efficiency of perovskite solar cell, the present invention discloses a novel electron transport structure comprising an interfacial diploe moment enhancing layer, an electron transport layer and an interfacial layer. After applying this electron transport structure in a perovskite solar cell, it is found that an interfacial dipole moment formed between the electron transport layer of the electron transport structure and an active layer of the perovskite solar cell is amplified, so as to give rise to an enhanced driving force for the separation of photogenerated carriers and accelerating charge extraction. Moreover, a variety of experimental data have proved that, compared with the perovskite solar cell having double-layer ETL, the perovskite solar cell using this novel electron transport structure exhibits understanding performances including short-circuit current, open-circuit voltage, filling factor, and power conversion efficiency.

Electron transport structure and perovskite solar cell having the same

Compared to traditional ITO transparent substrate showing drawbacks of high sheet resistance, poor flexibility and high manufacturing cost, the present invention mainly discloses a transparent conductive film fabricated by sequentially forming a wetting layer and an ultra-thin metal layer onto a transparent substrate, wherein the transparent conductive film includes advantages of low sheet resistance, high transmittance, great flexibility, and low manufacturing cost. Moreover, a variety of experiment data have proved that, this novel transparent conductive film can not only be applied in the fabrication of some electro-optical devices such as organic solar cell and OLED, but also helpful to the enhancement of the fundamental and essential characteristics of the electro-optical devices.

Transparent conductive film and electro-optical device having the same

A method of fabricating a perovskite solar cell includes forming a hole transport layer on a transparent electrically conductive substrate, and forming a perovskite layer on the hole transport layer via a two-stage vacuum evaporation process. Then, an electron transport layer and an electrode layer are formed in order. The two-stage vacuum evaporation process includes first vacuum evaporating a first material on the hole transport layer and then vacuum evaporating a second material on the first material so as to react the first material with the second material in situ and form the perovskite layer.

Method of fabricating perovskite solar cell

A method and device in which the light emitted from a color sub-pixel in an organic light emitted display panel can be the sum of two or more light beams of slightly different colors in the same wavelength range. The difference in color is the result of difference in the length of the resonant cavity within the same color sub-pixel. In the manufacturing process, the non-uniformity in the layer thickness can cause a shift in the color coordinates in the color sub-pixels. The color shift when the width of the color spectrum is narrow is more noticeable. By broadening the width of the color spectrum, the color shift would become less appreciable. Thus, broadening the width of the color spectrum would ease the strict requirements in manufacturing.

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Hsinchu, Taiwan

Hao-Wu Lin