Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao-Wen Hsu

Chun-Chieh Huang

Chia-Der Chang

Pin-Cheng Hsu

Chih-Wei Kao

Hsiao-Hui Yu

According to an exemplary embodiment, a method of forming a MIM capacitor is provided. The method includes the following operations: providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. According to an exemplary embodiment, a MIM capacitor is provided. The MIM capacitor includes a first metal layer; a dielectric layer over the first metal layer; a second metal layer over the dielectric layer; and an oxidized portion in proximity to the second metal layer and made of oxidized second metal layer.

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Hsinchu, Taiwan

Hao-Wen Hsu